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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSIA456DJ-T1-GE3
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SIA456DJ-T1-GE3 - Vishay Siliconix

Manifakti Nimewo Pati
SIA456DJ-T1-GE3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SIA456DJ-T1-GE3
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 200V 2.6A PPAK SC70
Deskripsyon detaye
Pake
PowerPAK® SC-70-6
Done fèy
SIA456DJ.pdf
RoHs Status
Nan stok: 84820

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon SIA456DJ-T1-GE3 Tech
Vishay Siliconix - SIA456DJ-T1-GE3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SIA456DJ-T1-GE3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 1.4V @ 250µA  
Vgs (Max) ±16V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PowerPAK® SC-70-6  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 1.38Ohm @ 750mA, 4.5V  
Dissipasyon pouvwa (Max) 3.5W (Ta), 19W (Tc)  
Pake / Ka PowerPAK® SC-70-6  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 350 pF @ 100 V  
Pòtay Charge (Qg) (Max) @ Vgs 14.5 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 1.8V, 4.5V  
Drenaj Sous Voltage (Vdss) 200 V  
Kouran - Kontini Drain (Id) @ 25 ° C 2.6A (Tc)  
Nimewo pwodwi baz SIA456  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SIA456DJ-T1-GE3.

Pwodwi atribi SIA456DJ-T1-GE3 SIA459EDJ-T1-GE3 SIA449DJ-T1-GE3 SIA462DJ-T1-GE3
Nimewo Pati SIA456DJ-T1-GE3 SIA459EDJ-T1-GE3 SIA449DJ-T1-GE3 SIA462DJ-T1-GE3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Dissipasyon pouvwa (Max) 3.5W (Ta), 19W (Tc) 2.9W (Ta), 15.6W (Tc) 3.5W (Ta), 19W (Tc) 3.5W (Ta), 19W (Tc)
Pòtay Charge (Qg) (Max) @ Vgs 14.5 nC @ 10 V 30 nC @ 10 V 72 nC @ 10 V 17 nC @ 10 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drenaj Sous Voltage (Vdss) 200 V 20 V 30 V 30 V
Kouran - Kontini Drain (Id) @ 25 ° C 2.6A (Tc) 9A (Tc) 12A (Tc) 12A (Tc)
Operating Tanperati -55°C ~ 150°C (TJ) -50°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Vgs (th) (Max) @ Id 1.4V @ 250µA 1.2V @ 250µA 1.5V @ 250µA 2.4V @ 250µA
Nimewo pwodwi baz SIA456 SIA459 SIA449 SIA462
Rds Sou (Max) @ Id, Vgs 1.38Ohm @ 750mA, 4.5V 35mOhm @ 5A, 4.5V 20mOhm @ 6A, 10V 18mOhm @ 9A, 10V
Founisè Aparèy pake PowerPAK® SC-70-6 PowerPAK® SC-70-6 PowerPAK® SC-70-6 PowerPAK® SC-70-6 Single
Fèt tip N-Channel P-Channel P-Channel N-Channel
Vgs (Max) ±16V ±12V ±12V ±20V
Seri TrenchFET® TrenchFET® TrenchFET® TrenchFET®
Kondwi Voltage (Max Rds sou, Min Rds sou) 1.8V, 4.5V 2.5V, 4.5V 2.5V, 10V 4.5V, 10V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kapasite Antre (Ciss) (Max) @ Vds 350 pF @ 100 V 885 pF @ 10 V 2140 pF @ 15 V 570 pF @ 15 V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
FET Feature - - - -
Pake / Ka PowerPAK® SC-70-6 PowerPAK® SC-70-6 PowerPAK® SC-70-6 PowerPAK® SC-70-6

SIA456DJ-T1-GE3 fich PDF

Download SIA456DJ-T1-GE3 PDF fich ak dokiman Vishay Siliconix pou SIA456DJ-T1-GE3 - Vishay Siliconix.

Fich
SIA456DJ.pdf

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Sètifikasyon & Manm

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Vishay Siliconix

SIA456DJ-T1-GE3

Vishay Siliconix
32D-SIA456DJ-T1-GE3

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