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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSIHG17N80E-GE3
SIHG17N80E-GE3 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
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Metòd Peman

SIHG17N80E-GE3 - Vishay Siliconix

Manifakti Nimewo Pati
SIHG17N80E-GE3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SIHG17N80E-GE3
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 800V 15A TO247AC
Pake
TO-247-3
Done fèy
SIHG17N80E.pdf
Sètifikasyon nou an
Nan stok: 13159

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EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon SIHG17N80E-GE3 Tech
Vishay Siliconix - SIHG17N80E-GE3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SIHG17N80E-GE3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-247AC  
Seri E  
Rds Sou (Max) @ Id, Vgs 290mOhm @ 8.5A, 10V  
Dissipasyon pouvwa (Max) 208W (Tc)  
Pake / Ka TO-247-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 2408 pF @ 100 V  
Pòtay Charge (Qg) (Max) @ Vgs 122 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 800 V  
Kouran - Kontini Drain (Id) @ 25 ° C 15A (Tc)  
Nimewo pwodwi baz SIHG17  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SIHG17N80E-GE3.

Pwodwi atribi SIHG17N80E-GE3 SIHG20N50C-E3 SIHG21N60EF-GE3 SIHG22N50D-E3
Nimewo Pati SIHG17N80E-GE3 SIHG20N50C-E3 SIHG21N60EF-GE3 SIHG22N50D-E3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Vgs (th) (Max) @ Id 4V @ 250µA 5V @ 250µA 4V @ 250µA 5V @ 250µA
Pake / Ka TO-247-3 TO-247-3 TO-247-3 TO-247-3
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Seri E - - -
Dissipasyon pouvwa (Max) 208W (Tc) 250W (Tc) 227W (Tc) 312W (Tc)
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Kapasite Antre (Ciss) (Max) @ Vds 2408 pF @ 100 V 2942 pF @ 25 V 2030 pF @ 100 V 1938 pF @ 100 V
Pakèt Tube Tube Tube Tube
Rds Sou (Max) @ Id, Vgs 290mOhm @ 8.5A, 10V 270mOhm @ 10A, 10V 176mOhm @ 11A, 10V 230mOhm @ 11A, 10V
Kouran - Kontini Drain (Id) @ 25 ° C 15A (Tc) 20A (Tc) 21A (Tc) 22A (Tc)
Founisè Aparèy pake TO-247AC TO-247AC TO-247AC TO-247AC
Pòtay Charge (Qg) (Max) @ Vgs 122 nC @ 10 V 76 nC @ 10 V 84 nC @ 10 V 98 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Drenaj Sous Voltage (Vdss) 800 V 500 V 600 V 500 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Nimewo pwodwi baz SIHG17 SIHG20 SIHG21 SIHG22
Fèt tip N-Channel N-Channel N-Channel N-Channel
FET Feature - - - -

SIHG17N80E-GE3 fich PDF

Download SIHG17N80E-GE3 PDF fich ak dokiman Vishay Siliconix pou SIHG17N80E-GE3 - Vishay Siliconix.

Asanble PCN/orijin
Mosfet Mfg Add 28/Sep/2020.pdf
PCN anbalaj
Packing Tube Design 19/Sep/2019.pdf
Fich
SIHG17N80E.pdf

Shipment

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SIHG17N80E-GE3 Image

SIHG17N80E-GE3

Vishay Siliconix
32D-SIHG17N80E-GE3

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