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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSIHW47N60E-GE3
SIHW47N60E-GE3 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SIHW47N60E-GE3 - Vishay Siliconix

Manifakti Nimewo Pati
SIHW47N60E-GE3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SIHW47N60E-GE3
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 600V 47A TO247AD
Deskripsyon detaye
Pake
TO-3P-3 Full Pack
Done fèy
SIHW47N60E.pdf
RoHs Status
Nan stok: 8362

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Espesifikasyon

Espesifikasyon SIHW47N60E-GE3 Tech
Vishay Siliconix - SIHW47N60E-GE3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SIHW47N60E-GE3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-247AD  
Seri -  
Rds Sou (Max) @ Id, Vgs 64mOhm @ 24A, 10V  
Dissipasyon pouvwa (Max) 357W (Tc)  
Pake / Ka TO-3P-3 Full Pack  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 9620 pF @ 100 V  
Pòtay Charge (Qg) (Max) @ Vgs 220 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 600 V  
Kouran - Kontini Drain (Id) @ 25 ° C 47A (Tc)  
Nimewo pwodwi baz SIHW47  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SIHW47N60E-GE3.

Pwodwi atribi SIHW47N60E-GE3 SIHP8N50D-E3 SIHW70N60EF-GE3 SIHP5N50D-E3
Nimewo Pati SIHW47N60E-GE3 SIHP8N50D-E3 SIHW70N60EF-GE3 SIHP5N50D-E3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Drenaj Sous Voltage (Vdss) 600 V 500 V 600 V 500 V
Pake / Ka TO-3P-3 Full Pack TO-220-3 TO-247-3 TO-220-3
Vgs (th) (Max) @ Id 4V @ 250µA 5V @ 250µA 4V @ 250µA 5V @ 250µA
Kapasite Antre (Ciss) (Max) @ Vds 9620 pF @ 100 V 527 pF @ 100 V 7500 pF @ 100 V 325 pF @ 100 V
Dissipasyon pouvwa (Max) 357W (Tc) 156W (Tc) 520W (Tc) 104W (Tc)
Founisè Aparèy pake TO-247AD TO-220AB TO-247AD TO-220AB
Kouran - Kontini Drain (Id) @ 25 ° C 47A (Tc) 8.7A (Tc) 70A (Tc) 5.3A (Tc)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
FET Feature - - - -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Nimewo pwodwi baz SIHW47 SIHP8 SIHW70 SIHP5
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Pakèt Tube Tube Tube Tube
Seri - - - -
Vgs (Max) ±20V ±30V ±30V ±30V
Pòtay Charge (Qg) (Max) @ Vgs 220 nC @ 10 V 30 nC @ 10 V 380 nC @ 10 V 20 nC @ 10 V
Rds Sou (Max) @ Id, Vgs 64mOhm @ 24A, 10V 850mOhm @ 4A, 10V 38mOhm @ 35A, 10V 1.5Ohm @ 2.5A, 10V

SIHW47N60E-GE3 fich PDF

Download SIHW47N60E-GE3 PDF fich ak dokiman Vishay Siliconix pou SIHW47N60E-GE3 - Vishay Siliconix.

Asanble PCN/orijin
SIL-079-2014-Rev-0 26/Sep/2014.pdf
Fich
SIHW47N60E.pdf

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Sètifikasyon & Manm

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SIHW47N60E-GE3 Image

SIHW47N60E-GE3

Vishay Siliconix
32D-SIHW47N60E-GE3

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