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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSIR330DP-T1-GE3
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SIR330DP-T1-GE3 - Vishay Siliconix

Manifakti Nimewo Pati
SIR330DP-T1-GE3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SIR330DP-T1-GE3
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 30V 35A PPAK SO-8
Deskripsyon detaye
Pake
PowerPAK® SO-8
Done fèy
SIR330DP-T1-GE3.pdf
RoHs Status
Nan stok: 4090

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon SIR330DP-T1-GE3 Tech
Vishay Siliconix - SIR330DP-T1-GE3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SIR330DP-T1-GE3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 2.5V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PowerPAK® SO-8  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 5.6mOhm @ 10A, 10V  
Dissipasyon pouvwa (Max) 5W (Ta), 27.7W (Tc)  
Pake / Ka PowerPAK® SO-8  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1300 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 35 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 35A (Tc)  
Nimewo pwodwi baz SIR330  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SIR330DP-T1-GE3.

Pwodwi atribi SIR330DP-T1-GE3 SIR184DP-T1-RE3 SIR403EDP-T1-GE3 SIR401DP-T1-GE3
Nimewo Pati SIR330DP-T1-GE3 SIR184DP-T1-RE3 SIR403EDP-T1-GE3 SIR401DP-T1-GE3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Drenaj Sous Voltage (Vdss) 30 V 60 V 30 V 20 V
Nimewo pwodwi baz SIR330 SIR184 SIR403 SIR401
Vgs (th) (Max) @ Id 2.5V @ 250µA 3.4V @ 250µA 2.8V @ 250µA 1.5V @ 250µA
Rds Sou (Max) @ Id, Vgs 5.6mOhm @ 10A, 10V 5.8mOhm @ 10A, 10V 6.5mOhm @ 13A, 10V 3.2mOhm @ 15A, 10V
Fèt tip N-Channel N-Channel P-Channel P-Channel
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Founisè Aparèy pake PowerPAK® SO-8 PowerPAK® SO-8 PowerPAK® SO-8 PowerPAK® SO-8
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 7.5V, 10V 4.5V, 10V 2.5V, 10V
Seri TrenchFET® TrenchFET® Gen IV TrenchFET® TrenchFET®
Kapasite Antre (Ciss) (Max) @ Vds 1300 pF @ 15 V 1490 pF @ 30 V 4620 pF @ 15 V 9080 pF @ 10 V
Dissipasyon pouvwa (Max) 5W (Ta), 27.7W (Tc) 5W (Ta), 62.5W (Tc) 5W (Ta), 56.8W (Tc) 5W (Ta), 39W (Tc)
FET Feature - - - -
Vgs (Max) ±20V ±20V ±25V ±12V
Pòtay Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 32 nC @ 10 V 153 nC @ 10 V 310 nC @ 10 V
Kouran - Kontini Drain (Id) @ 25 ° C 35A (Tc) 20.7A (Ta), 73A (Tc) 40A (Tc) 50A (Tc)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pake / Ka PowerPAK® SO-8 PowerPAK® SO-8 PowerPAK® SO-8 PowerPAK® SO-8

SIR330DP-T1-GE3 fich PDF

Download SIR330DP-T1-GE3 PDF fich ak dokiman Vishay Siliconix pou SIR330DP-T1-GE3 - Vishay Siliconix.

Asanble PCN/orijin
Multiple Fabracation Changes09/Jul/2014.pdf
PCN obsolescence/ eol
OBS 11/Feb/2016.pdf
Fich
SIR330DP-T1-GE3.pdf

Shipment

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Sètifikasyon & Manm

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Vishay Siliconix

SIR330DP-T1-GE3

Vishay Siliconix
32D-SIR330DP-T1-GE3

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