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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSQ3419EEV-T1-GE3
SQ3419EEV-T1-GE3 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SQ3419EEV-T1-GE3 - Vishay Siliconix

Manifakti Nimewo Pati
SQ3419EEV-T1-GE3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SQ3419EEV-T1-GE3
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 40V 7.4A 6TSOP
Deskripsyon detaye
Pake
SOT-23-6 Thin, TSOT-23-6
Done fèy
SQ3419EEV-T1-GE3.pdf
RoHs Status
Nan stok: 4420

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Kantite

Espesifikasyon

Espesifikasyon SQ3419EEV-T1-GE3 Tech
Vishay Siliconix - SQ3419EEV-T1-GE3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SQ3419EEV-T1-GE3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 2.5V @ 250µA  
Vgs (Max) ±12V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 6-TSOP  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 50mOhm @ 2.5A, 10V  
Dissipasyon pouvwa (Max) 5W (Tc)  
Pake / Ka SOT-23-6 Thin, TSOT-23-6  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1065 pF @ 20 V  
Pòtay Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 40 V  
Kouran - Kontini Drain (Id) @ 25 ° C 7.4A (Tc)  
Nimewo pwodwi baz SQ3419  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SQ3419EEV-T1-GE3.

Pwodwi atribi SQ3419EEV-T1-GE3 SQ3418AEEV-T1_GE3 SQ3419EV-T1_BE3 SQ3418EEV-T1-GE3
Nimewo Pati SQ3419EEV-T1-GE3 SQ3418AEEV-T1_GE3 SQ3419EV-T1_BE3 SQ3418EEV-T1-GE3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Drenaj Sous Voltage (Vdss) 40 V 40 V 40 V 40 V
Seri TrenchFET® TrenchFET® Automotive, AEC-Q101, TrenchFET® -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Kouran - Kontini Drain (Id) @ 25 ° C 7.4A (Tc) 8A 6.9A (Tc) 8A (Tc)
Pake / Ka SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6
Nimewo pwodwi baz SQ3419 SQ3418 SQ3419 SQ3418
Fèt tip P-Channel N-Channel P-Channel N-Channel
Kapasite Antre (Ciss) (Max) @ Vds 1065 pF @ 20 V 528 pF @ 25 V 990 pF @ 20 V 660 pF @ 25 V
FET Feature - - - -
Rds Sou (Max) @ Id, Vgs 50mOhm @ 2.5A, 10V 35mOhm @ 6A, 10V 58mOhm @ 2.5A, 10V 32mOhm @ 5A, 10V
Founisè Aparèy pake 6-TSOP 6-TSOP 6-TSOP 6-TSOP
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Cut Tape (CT)
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V -
Pòtay Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V 3.5 nC @ 4.5 V 11.3 nC @ 4.5 V 11 nC @ 4.5 V
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -
Vgs (Max) ±12V ±20V ±20V -
Dissipasyon pouvwa (Max) 5W (Tc) 5W (Tc) 5W (Tc) -

SQ3419EEV-T1-GE3 fich PDF

Download SQ3419EEV-T1-GE3 PDF fich ak dokiman Vishay Siliconix pou SQ3419EEV-T1-GE3 - Vishay Siliconix.

PCN obsolescence/ eol
Multiple Devices 03/Mar/2015.pdf

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SQ3419EEV-T1-GE3 Image

SQ3419EEV-T1-GE3

Vishay Siliconix
32D-SQ3419EEV-T1-GE3

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