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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSQ4401EY-T1_GE3
SQ4401EY-T1_GE3 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SQ4401EY-T1_GE3 - Vishay Siliconix

Manifakti Nimewo Pati
SQ4401EY-T1_GE3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SQ4401EY-T1_GE3
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 40V 17.3A 8SO
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
SQ4401EY-T1-GE3.pdf
RoHs Status
Nan stok: 20837

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Kantite

Espesifikasyon

Espesifikasyon SQ4401EY-T1_GE3 Tech
Vishay Siliconix - SQ4401EY-T1_GE3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SQ4401EY-T1_GE3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 2.5V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SOIC  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 14mOhm @ 10.5A, 10V  
Dissipasyon pouvwa (Max) 7.14W (Tc)  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 4250 pF @ 20 V  
Pòtay Charge (Qg) (Max) @ Vgs 115 nC @ 10 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 40 V  
Kouran - Kontini Drain (Id) @ 25 ° C 17.3A (Tc)  
Nimewo pwodwi baz SQ4401  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SQ4401EY-T1_GE3.

Pwodwi atribi SQ4401EY-T1_GE3 SQ4431EY-T1_GE3 SQ4431EY SQ4401EY-T1
Nimewo Pati SQ4401EY-T1_GE3 SQ4431EY-T1_GE3 SQ4431EY SQ4401EY-T1
Manifakti Vishay Siliconix Vishay Siliconix Vishay Electro-Films (EFI) / Vishay
Vgs (Max) ±20V ±20V - -
Kapasite Antre (Ciss) (Max) @ Vds 4250 pF @ 20 V 1265 pF @ 15 V - -
Nimewo pwodwi baz SQ4401 SQ4431 - -
Fèt tip P-Channel P-Channel - -
Pakèt Tape & Reel (TR) Tape & Reel (TR) - -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) - -
Founisè Aparèy pake 8-SOIC 8-SOIC - -
Mounting Kalite Surface Mount Surface Mount - -
Kouran - Kontini Drain (Id) @ 25 ° C 17.3A (Tc) 10.8A (Tc) - -
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) - -
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 10V - -
Rds Sou (Max) @ Id, Vgs 14mOhm @ 10.5A, 10V 30mOhm @ 6A, 10V - -
Vgs (th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA - -
Dissipasyon pouvwa (Max) 7.14W (Tc) 6W (Tc) - -
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) - -
Seri TrenchFET® Automotive, AEC-Q101, TrenchFET® - -
FET Feature - - - -
Drenaj Sous Voltage (Vdss) 40 V 30 V - -
Pòtay Charge (Qg) (Max) @ Vgs 115 nC @ 10 V 25 nC @ 10 V - -

SQ4401EY-T1_GE3 fich PDF

Download SQ4401EY-T1_GE3 PDF fich ak dokiman Vishay Siliconix pou SQ4401EY-T1_GE3 - Vishay Siliconix.

Nimewo pati PCN
New Ordering Code 19/Mar/2015.pdf
Asanble PCN/orijin
Process Change 11/Apr/2023.pdf
Fich
SQ4401EY-T1-GE3.pdf
PCN obsolescence/ eol
SQ4401EY-T1_xE3 obs 14/Jun/2023.pdf

Shipment

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Sètifikasyon & Manm

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SQ4401EY-T1_GE3 Image

SQ4401EY-T1_GE3

Vishay Siliconix
32D-SQ4401EY-T1_GE3

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