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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSQJ416EP-T1_GE3
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SQJ416EP-T1_GE3 - Vishay Siliconix

Manifakti Nimewo Pati
SQJ416EP-T1_GE3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SQJ416EP-T1_GE3
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 27A PPAK SO-8
Deskripsyon detaye
Pake
PowerPAK® SO-8
Done fèy
SQJ416EP.pdf
RoHs Status
Nan stok: 67510

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon SQJ416EP-T1_GE3 Tech
Vishay Siliconix - SQJ416EP-T1_GE3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SQJ416EP-T1_GE3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 3.5V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PowerPAK® SO-8  
Seri Automotive, AEC-Q101, TrenchFET®  
Rds Sou (Max) @ Id, Vgs 30mOhm @ 10A, 10V  
Dissipasyon pouvwa (Max) 45W (Tc)  
Pake / Ka PowerPAK® SO-8  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 800 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 20 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 27A (Tc)  
Nimewo pwodwi baz SQJ416  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SQJ416EP-T1_GE3.

Pwodwi atribi SQJ416EP-T1_GE3 SQJ420EP-T1_GE3 SQJ414EP-T1_GE3 SQJ415EP-T1_GE3
Nimewo Pati SQJ416EP-T1_GE3 SQJ420EP-T1_GE3 SQJ414EP-T1_GE3 SQJ415EP-T1_GE3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Drenaj Sous Voltage (Vdss) 100 V 40 V 30 V 40 V
Vgs (th) (Max) @ Id 3.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Nimewo pwodwi baz SQJ416 SQJ420 SQJ414 SQJ415
Rds Sou (Max) @ Id, Vgs 30mOhm @ 10A, 10V 10mOhm @ 9.7A, 10V 12mOhm @ 4.5A, 10V 14mOhm @ 10A, 10V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Pòtay Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 41 nC @ 10 V 25 nC @ 10 V 95 nC @ 10 V
FET Feature - - - -
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Seri Automotive, AEC-Q101, TrenchFET® Automotive, AEC-Q101, TrenchFET® Automotive, AEC-Q101, TrenchFET® Automotive, AEC-Q101, TrenchFET®
Kapasite Antre (Ciss) (Max) @ Vds 800 pF @ 25 V 1860 pF @ 25 V 1110 pF @ 15 V 6000 pF @ 25 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Founisè Aparèy pake PowerPAK® SO-8 PowerPAK® SO-8 PowerPAK® SO-8 PowerPAK® SO-8
Kouran - Kontini Drain (Id) @ 25 ° C 27A (Tc) 30A (Tc) 30A (Tc) 30A (Tc)
Fèt tip N-Channel N-Channel N-Channel P-Channel
Vgs (Max) ±20V ±20V ±20V ±20V
Pake / Ka PowerPAK® SO-8 PowerPAK® SO-8 PowerPAK® SO-8 PowerPAK® SO-8
Dissipasyon pouvwa (Max) 45W (Tc) 45W (Tc) 45W (Tc) 45W (Tc)

SQJ416EP-T1_GE3 fich PDF

Download SQJ416EP-T1_GE3 PDF fich ak dokiman Vishay Siliconix pou SQJ416EP-T1_GE3 - Vishay Siliconix.

Fich
SQJ416EP.pdf

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Sètifikasyon & Manm

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Vishay Siliconix

SQJ416EP-T1_GE3

Vishay Siliconix
32D-SQJ416EP-T1_GE3

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