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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArraySQJ992EP-T1_GE3
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SQJ992EP-T1_GE3 - Vishay Siliconix

Manifakti Nimewo Pati
SQJ992EP-T1_GE3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SQJ992EP-T1_GE3
ECAD modèl
Pati Deskripsyon
MOSFET 2N-CH 60V 15A POWERPAKSO8
Deskripsyon detaye
Pake
PowerPAK® SO-8 Dual
Done fèy
SQJ992EP.pdf
RoHs Status
Nan stok: 71970

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon SQJ992EP-T1_GE3 Tech
Vishay Siliconix - SQJ992EP-T1_GE3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SQJ992EP-T1_GE3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 2.5V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PowerPAK® SO-8 Dual  
Seri Automotive, AEC-Q101, TrenchFET®  
Rds Sou (Max) @ Id, Vgs 56.2mOhm @ 3.7A, 10V  
Pouvwa - Max 34W  
Pake / Ka PowerPAK® SO-8 Dual  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 446pF @ 30V  
Pòtay Charge (Qg) (Max) @ Vgs 12nC @ 10V  
FET Feature -  
Drenaj Sous Voltage (Vdss) 60V  
Kouran - Kontini Drain (Id) @ 25 ° C 15A  
Konfigirasyon 2 N-Channel (Dual)  
Nimewo pwodwi baz SQJ992  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SQJ992EP-T1_GE3.

Pwodwi atribi SQJ992EP-T1_GE3 SQJ992EP-T2_GE3 SQJ974EP-T1_GE3 SQJ968EP-T1_GE3
Nimewo Pati SQJ992EP-T1_GE3 SQJ992EP-T2_GE3 SQJ974EP-T1_GE3 SQJ968EP-T1_GE3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Nimewo pwodwi baz SQJ992 SQJ992 SQJ974 SQJ968
Vgs (th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Drenaj Sous Voltage (Vdss) 60V 60V 100V 60V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kapasite Antre (Ciss) (Max) @ Vds 446pF @ 30V 446pF @ 30V 1050pF @ 25V 714pF @ 30V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Pòtay Charge (Qg) (Max) @ Vgs 12nC @ 10V 12nC @ 10V 30nC @ 10V 18.5nC @ 10V
Pouvwa - Max 34W 34W (Tc) 48W 42W (Tc)
Konfigirasyon 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
Founisè Aparèy pake PowerPAK® SO-8 Dual PowerPAK® SO-8 Dual PowerPAK® SO-8 Dual PowerPAK® SO-8 Dual
Kouran - Kontini Drain (Id) @ 25 ° C 15A 15A (Tc) 30A (Tc) 23.5A (Tc)
FET Feature - - - -
Rds Sou (Max) @ Id, Vgs 56.2mOhm @ 3.7A, 10V 56.2mOhm @ 3.7A, 10V 25.5mOhm @ 10A, 10V 33.6mOhm @ 4.8A, 10V
Seri Automotive, AEC-Q101, TrenchFET® Automotive, AEC-Q101, TrenchFET® Automotive, AEC-Q101, TrenchFET® Automotive, AEC-Q101, TrenchFET®
Pake / Ka PowerPAK® SO-8 Dual PowerPAK® SO-8 Dual PowerPAK® SO-8 Dual PowerPAK® SO-8 Dual
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TA)

SQJ992EP-T1_GE3 fich PDF

Download SQJ992EP-T1_GE3 PDF fich ak dokiman Vishay Siliconix pou SQJ992EP-T1_GE3 - Vishay Siliconix.

Nimewo pati PCN
New Ordering Code 19/Mar/2015.pdf
Fich
SQJ992EP.pdf

Shipment

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Sètifikasyon & Manm

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Vishay Siliconix

SQJ992EP-T1_GE3

Vishay Siliconix
32D-SQJ992EP-T1_GE3

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