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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSQSA12CENW-T1_GE3
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SQSA12CENW-T1_GE3 - Vishay Siliconix

Manifakti Nimewo Pati
SQSA12CENW-T1_GE3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SQSA12CENW-T1_GE3
ECAD modèl
Pati Deskripsyon
AUTOMOTIVE N-CHANNEL 100 V (D-S)
Deskripsyon detaye
Pake
PowerPAK® 1212-8W
Done fèy
SQSA12CENW-T1_GE3.pdf
RoHs Status
Nan stok: 90350

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon SQSA12CENW-T1_GE3 Tech
Vishay Siliconix - SQSA12CENW-T1_GE3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SQSA12CENW-T1_GE3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 2.5V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PowerPAK® 1212-8W  
Seri Automotive, AEC-Q101, TrenchFET®  
Rds Sou (Max) @ Id, Vgs 22mOhm @ 7A, 10V  
Dissipasyon pouvwa (Max) 62.5W (Tc)  
Pake / Ka PowerPAK® 1212-8W  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 2900 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 47 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 18A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SQSA12CENW-T1_GE3.

Pwodwi atribi SQSA12CENW-T1_GE3 SQS462EN-T1_GE3 SQS484EN-T1_BE3 SQSA80ENW-T1_GE3
Nimewo Pati SQSA12CENW-T1_GE3 SQS462EN-T1_GE3 SQS484EN-T1_BE3 SQSA80ENW-T1_GE3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Kouran - Kontini Drain (Id) @ 25 ° C 18A (Tc) 8A (Tc) 16A (Tc) 18A (Tc)
Vgs (Max) ±20V ±20V ±20V ±20V
Founisè Aparèy pake PowerPAK® 1212-8W PowerPAK® 1212-8 PowerPAK® 1212-8 PowerPAK® 1212-8
Drenaj Sous Voltage (Vdss) 100 V 60 V 40 V 80 V
Rds Sou (Max) @ Id, Vgs 22mOhm @ 7A, 10V 63mOhm @ 4.3A, 10V 9mOhm @ 16.4A, 10V 21mOhm @ 10A, 10V
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Dissipasyon pouvwa (Max) 62.5W (Tc) 33W (Tc) 62W (Tc) 62.5W (Tc)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Vgs (th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Pake / Ka PowerPAK® 1212-8W PowerPAK® 1212-8 PowerPAK® 1212-8 PowerPAK® 1212-8
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kapasite Antre (Ciss) (Max) @ Vds 2900 pF @ 25 V 470 pF @ 25 V 1855 pF @ 25 V 1358 pF @ 40 V
Seri Automotive, AEC-Q101, TrenchFET® Automotive, AEC-Q101, TrenchFET® Automotive, AEC-Q101, TrenchFET® Automotive, AEC-Q101, TrenchFET®
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Feature - - - -
Pòtay Charge (Qg) (Max) @ Vgs 47 nC @ 10 V 12 nC @ 10 V 39 nC @ 10 V 21 nC @ 10 V

Shipment

Tan livrezon

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Pri livrezon

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Metòd livrezon

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DHL & FedEx Shipment Chaj Referans
Chajman chaj (kg) Referans DHL (USD $)
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2.00kg-3.00kg USD $ 50.00 - USD $ 100.00
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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

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Vishay Siliconix

SQSA12CENW-T1_GE3

Vishay Siliconix
32D-SQSA12CENW-T1_GE3

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