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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSUG80050E-GE3
SUG80050E-GE3 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SUG80050E-GE3 - Vishay Siliconix

Manifakti Nimewo Pati
SUG80050E-GE3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SUG80050E-GE3
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 150V 100A TO247AC
Deskripsyon detaye
Pake
TO-247-3
Done fèy
SUG80050E.pdf
RoHs Status
Nan stok: 19190

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon SUG80050E-GE3 Tech
Vishay Siliconix - SUG80050E-GE3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SUG80050E-GE3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-247AC  
Seri ThunderFET®  
Rds Sou (Max) @ Id, Vgs 5.4mOhm @ 20A, 10V  
Dissipasyon pouvwa (Max) 500W (Tc)  
Pake / Ka TO-247-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 6250 pF @ 75 V  
Pòtay Charge (Qg) (Max) @ Vgs 165 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 7.5V, 10V  
Drenaj Sous Voltage (Vdss) 150 V  
Kouran - Kontini Drain (Id) @ 25 ° C 100A (Tc)  
Nimewo pwodwi baz SUG80050  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SUG80050E-GE3.

Pwodwi atribi SUG80050E-GE3 SUD50P06-15L-E3 STD85N3LH5 SI7431DP-T1-E3
Nimewo Pati SUG80050E-GE3 SUD50P06-15L-E3 STD85N3LH5 SI7431DP-T1-E3
Manifakti Vishay Siliconix Vishay Siliconix STMicroelectronics Vishay Siliconix
Founisè Aparèy pake TO-247AC TO-252AA DPAK PowerPAK® SO-8
Kapasite Antre (Ciss) (Max) @ Vds 6250 pF @ 75 V 4950 pF @ 25 V 1850 pF @ 25 V -
Vgs (Max) ±20V ±20V ±22V ±20V
Fèt tip N-Channel P-Channel N-Channel P-Channel
Kouran - Kontini Drain (Id) @ 25 ° C 100A (Tc) 50A (Tc) 80A (Tc) 2.2A (Ta)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drenaj Sous Voltage (Vdss) 150 V 60 V 30 V 200 V
Rds Sou (Max) @ Id, Vgs 5.4mOhm @ 20A, 10V 15mOhm @ 17A, 10V 5mOhm @ 40A, 10V 174mOhm @ 3.8A, 10V
Seri ThunderFET® TrenchFET® STripFET™ V TrenchFET®
FET Feature - - - -
Pakèt Tube Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Nimewo pwodwi baz SUG80050 SUD50 STD85 SI7431
Pake / Ka TO-247-3 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 PowerPAK® SO-8
Mounting Kalite Through Hole Surface Mount Surface Mount Surface Mount
Vgs (th) (Max) @ Id 4V @ 250µA 3V @ 250µA 2.5V @ 250µA 4V @ 250µA
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) 175°C (TJ) -55°C ~ 150°C (TJ)
Kondwi Voltage (Max Rds sou, Min Rds sou) 7.5V, 10V 4.5V, 10V 5V, 10V 6V, 10V
Pòtay Charge (Qg) (Max) @ Vgs 165 nC @ 10 V 165 nC @ 10 V 14 nC @ 5 V 135 nC @ 10 V
Dissipasyon pouvwa (Max) 500W (Tc) 3W (Ta), 136W (Tc) 70W (Tc) 1.9W (Ta)

SUG80050E-GE3 fich PDF

Download SUG80050E-GE3 PDF fich ak dokiman Vishay Siliconix pou SUG80050E-GE3 - Vishay Siliconix.

Fich
SUG80050E.pdf
Asanble PCN/orijin
Manufacturing Capacity Expansion 21/Jun/2021.pdf

Shipment

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Sètifikasyon & Manm

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SUG80050E-GE3 Image

SUG80050E-GE3

Vishay Siliconix
32D-SUG80050E-GE3

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