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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleTP0610K-T1-E3
TP0610K-T1-E3 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

TP0610K-T1-E3 - Vishay Siliconix

Manifakti Nimewo Pati
TP0610K-T1-E3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-TP0610K-T1-E3
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 60V 185MA SOT23-3
Deskripsyon detaye
Pake
TO-236-3, SC-59, SOT-23-3
Done fèy
TP0610K.pdf
RoHs Status
Nan stok: 241370

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon TP0610K-T1-E3 Tech
Vishay Siliconix - TP0610K-T1-E3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - TP0610K-T1-E3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 3V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake SOT-23-3 (TO-236)  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 6Ohm @ 500mA, 10V  
Dissipasyon pouvwa (Max) 350mW (Ta)  
Pake / Ka TO-236-3, SC-59, SOT-23-3  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 23 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 1.7 nC @ 15 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 60 V  
Kouran - Kontini Drain (Id) @ 25 ° C 185mA (Ta)  
Nimewo pwodwi baz TP0610  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix TP0610K-T1-E3.

Pwodwi atribi TP0610K-T1-E3 TP0610T-G TP0610K-T1-GE3 TP0606N3-G
Nimewo Pati TP0610K-T1-E3 TP0610T-G TP0610K-T1-GE3 TP0606N3-G
Manifakti Vishay Siliconix Microchip Technology Vishay Siliconix Microchip Technology
Vgs (th) (Max) @ Id 3V @ 250µA 2.4V @ 1mA 3V @ 250µA 2.4V @ 1mA
Rds Sou (Max) @ Id, Vgs 6Ohm @ 500mA, 10V 10Ohm @ 200mA, 10V 6Ohm @ 500mA, 10V 3.5Ohm @ 750mA, 10V
Fèt tip P-Channel P-Channel P-Channel P-Channel
Pake / Ka TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-226-3, TO-92-3 (TO-226AA)
Drenaj Sous Voltage (Vdss) 60 V 60 V 60 V 60 V
Seri TrenchFET® - TrenchFET® -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Bag
Nimewo pwodwi baz TP0610 TP0610 TP0610 TP0606
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 5V, 10V
FET Feature - - - -
Mounting Kalite Surface Mount Surface Mount Surface Mount Through Hole
Vgs (Max) ±20V ±20V ±20V ±20V
Kapasite Antre (Ciss) (Max) @ Vds 23 pF @ 25 V 60 pF @ 25 V 23 pF @ 25 V 150 pF @ 25 V
Dissipasyon pouvwa (Max) 350mW (Ta) 360mW (Ta) 350mW (Ta) 1W (Tc)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Founisè Aparèy pake SOT-23-3 (TO-236) TO-236AB (SOT23) SOT-23-3 (TO-236) TO-92-3
Kouran - Kontini Drain (Id) @ 25 ° C 185mA (Ta) 120mA (Tj) 185mA (Ta) 320mA (Tj)
Pòtay Charge (Qg) (Max) @ Vgs 1.7 nC @ 15 V - 1.7 nC @ 15 V -

TP0610K-T1-E3 fich PDF

Download TP0610K-T1-E3 PDF fich ak dokiman Vishay Siliconix pou TP0610K-T1-E3 - Vishay Siliconix.

Enfòmasyon sou anviwònman an
Material Compliance.pdf
Asanble PCN/orijin
Mult Dev Factory Status 30/Oct/2020.pdf
Fich
TP0610K.pdf
PCN Lòt
2N7002/TP0610K 25/Mar/2019.pdf

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Sètifikasyon & Manm

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TP0610K-T1-E3 Image

TP0610K-T1-E3

Vishay Siliconix
32D-TP0610K-T1-E3

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