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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleFDFMA2P857
FDFMA2P857 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FDFMA2P857 - onsemi

Manifakti Nimewo Pati
FDFMA2P857
Manifakti
onsemi
Allelco Nimewo Pati
32D-FDFMA2P857
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 20V 3A 6MICROFET
Deskripsyon detaye
Pake
6-VDFN Exposed Pad
Done fèy
FDFMA2P857.pdf
Nan stok: 4780

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon FDFMA2P857 Tech
onsemi - FDFMA2P857 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - FDFMA2P857

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 1.3V @ 250µA  
Vgs (Max) ±8V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 6-MicroFET (2x2)  
Seri PowerTrench®  
Rds Sou (Max) @ Id, Vgs 120mOhm @ 3A, 4.5V  
Dissipasyon pouvwa (Max) 1.4W (Ta)  
Pake / Ka 6-VDFN Exposed Pad  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 435 pF @ 10 V  
Pòtay Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V  
Fèt tip P-Channel  
FET Feature Schottky Diode (Isolated)  
Kondwi Voltage (Max Rds sou, Min Rds sou) 1.8V, 4.5V  
Drenaj Sous Voltage (Vdss) 20 V  
Kouran - Kontini Drain (Id) @ 25 ° C 3A (Ta)  
Nimewo pwodwi baz FDFMA2  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi FDFMA2P857.

Pwodwi atribi FDFMA2P857 FDFMA2P029Z FDFMA2N028Z FDFMA3N109
Nimewo Pati FDFMA2P857 FDFMA2P029Z FDFMA2N028Z FDFMA3N109
Manifakti onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor
Vgs (th) (Max) @ Id 1.3V @ 250µA 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
FET Feature Schottky Diode (Isolated) Schottky Diode (Isolated) Schottky Diode (Isolated) Schottky Diode (Isolated)
Drenaj Sous Voltage (Vdss) 20 V 20 V 20 V 30 V
Rds Sou (Max) @ Id, Vgs 120mOhm @ 3A, 4.5V 95mOhm @ 3.1A, 4.5V 68mOhm @ 3.7A, 4.5V 123mOhm @ 2.9A, 4.5V
Kondwi Voltage (Max Rds sou, Min Rds sou) 1.8V, 4.5V 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Founisè Aparèy pake 6-MicroFET (2x2) 6-MicroFET (2x2) 6-MicroFET (2x2) 6-MicroFET (2x2)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Fèt tip P-Channel P-Channel N-Channel N-Channel
Kouran - Kontini Drain (Id) @ 25 ° C 3A (Ta) 3.1A (Ta) 3.7A (Ta) 2.9A (Tc)
Seri PowerTrench® PowerTrench® PowerTrench® PowerTrench®
Nimewo pwodwi baz FDFMA2 - - -
Pakèt Tape & Reel (TR) Bulk Bulk Bulk
Vgs (Max) ±8V ±12V ±12V ±12V
Pake / Ka 6-VDFN Exposed Pad 6-VDFN Exposed Pad 6-VDFN Exposed Pad 6-VDFN Exposed Pad
Kapasite Antre (Ciss) (Max) @ Vds 435 pF @ 10 V 720 pF @ 10 V 455 pF @ 10 V 220 pF @ 15 V
Dissipasyon pouvwa (Max) 1.4W (Ta) 1.4W (Tj) 1.4W (Tj) 1.5W (Ta)
Pòtay Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V 10 nC @ 4.5 V 6 nC @ 4.5 V 3 nC @ 4.5 V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)

FDFMA2P857 fich PDF

Download FDFMA2P857 PDF fich ak dokiman onsemi pou FDFMA2P857 - onsemi.

Enfòmasyon sou anviwònman an
onsemi REACH.pdf onsemi RoHS.pdf
PCN konsepsyon/spesifikasyon
Marking Content 19/Nov/2013.pdf
PCN obsolescence/ eol
EOL Notice 22/Feb/2017.pdf
Fich
FDFMA2P857.pdf

Shipment

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Sètifikasyon & Manm

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FDFMA2P857 Image

FDFMA2P857

onsemi
32D-FDFMA2P857

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