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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleFDFMA3N109
Fairchild Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FDFMA3N109 - Fairchild Semiconductor

Manifakti Nimewo Pati
FDFMA3N109
Manifakti
Fairchild (onsemi)
Allelco Nimewo Pati
32D-FDFMA3N109
ECAD modèl
Pati Deskripsyon
SMALL SIGNAL FIELD-EFFECT TRANSI
Deskripsyon detaye
Pake
6-VDFN Exposed Pad
Done fèy
FDFMA3N109.pdf
Nan stok: 4150

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon FDFMA3N109 Tech
Fairchild Semiconductor - FDFMA3N109 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Fairchild Semiconductor - FDFMA3N109

Pwodwi atribi Valè atribi  
Manifakti Fairchild (onsemi)  
Vgs (th) (Max) @ Id 1.5V @ 250µA  
Vgs (Max) ±12V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 6-MicroFET (2x2)  
Seri PowerTrench®  
Rds Sou (Max) @ Id, Vgs 123mOhm @ 2.9A, 4.5V  
Dissipasyon pouvwa (Max) 1.5W (Ta)  
Pake / Ka 6-VDFN Exposed Pad  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 220 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 3 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature Schottky Diode (Isolated)  
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 4.5V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 2.9A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Fairchild Semiconductor FDFMA3N109.

Pwodwi atribi FDFMA3N109 FDFMA3P029Z FDFMA3P029Z FDFME3N311ZT
Nimewo Pati FDFMA3N109 FDFMA3P029Z FDFMA3P029Z FDFME3N311ZT
Manifakti Fairchild Semiconductor Fairchild Semiconductor onsemi Fairchild Semiconductor
Vgs (Max) ±12V - - ±12V
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 4.5V - - -
Founisè Aparèy pake 6-MicroFET (2x2) 6-MLP (2x2) 6-MLP (2x2) 6-UMLP (1.6x1.6)
FET Feature Schottky Diode (Isolated) Schottky Diode (Isolated) Schottky Diode (Isolated) -
Pakèt Bulk Bulk Bulk Bulk
Vgs (th) (Max) @ Id 1.5V @ 250µA 3V @ 250µA 3V @ 250µA 1.5V @ 250µA
Seri PowerTrench® PowerTrench® PowerTrench® PowerTrench®
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pòtay Charge (Qg) (Max) @ Vgs 3 nC @ 4.5 V 10 nC @ 10 V 10 nC @ 10 V 1.4 nC @ 4.5 V
Dissipasyon pouvwa (Max) 1.5W (Ta) 1.4W (Ta) 1.4W (Ta) 600mW (Ta)
Rds Sou (Max) @ Id, Vgs 123mOhm @ 2.9A, 4.5V 87mOhm @ 3.3A, 10V 87mOhm @ 3.3A, 10V 299mOhm @ 1.6A, 4.5V
Kapasite Antre (Ciss) (Max) @ Vds 220 pF @ 15 V 435 pF @ 15 V 435 pF @ 15 V 75 pF @ 15 V
Drenaj Sous Voltage (Vdss) 30 V 30 V 30 V 30 V
Fèt tip N-Channel P-Channel P-Channel N-Channel
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Pake / Ka 6-VDFN Exposed Pad 6-WDFN Exposed Pad 6-WDFN Exposed Pad 6-UFDFN Exposed Pad
Kouran - Kontini Drain (Id) @ 25 ° C 2.9A (Tc) 3.3A (Ta) 3.3A (Ta) 1.8A (Ta)

Shipment

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Sètifikasyon & Manm

Wè plis
Fairchild Semiconductor

FDFMA3N109

Fairchild Semiconductor
32D-FDFMA3N109

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