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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayFQS4901TF
FQS4901TF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

FQS4901TF - onsemi

Manifakti Nimewo Pati
FQS4901TF
Manifakti
onsemi
Allelco Nimewo Pati
32D-FQS4901TF
ECAD modèl
Pati Deskripsyon
MOSFET 2N-CH 400V 450MA 8SOIC
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
FQS4901.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 4100

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon FQS4901TF Tech
onsemi - FQS4901TF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - FQS4901TF

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 4V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SOIC  
Seri QFET®  
Rds Sou (Max) @ Id, Vgs 4.2Ohm @ 225mA, 10V  
Pouvwa - Max 2W  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 210pF @ 25V  
Pòtay Charge (Qg) (Max) @ Vgs 7.5nC @ 10V  
FET Feature -  
Drenaj Sous Voltage (Vdss) 400V  
Kouran - Kontini Drain (Id) @ 25 ° C 450mA  
Konfigirasyon 2 N-Channel (Dual)  
Nimewo pwodwi baz FQS4901  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi FQS4901TF.

Pwodwi atribi FQS4901TF BSO615CGHUMA1 FQS4903TF STS4DPF20L
Nimewo Pati FQS4901TF BSO615CGHUMA1 FQS4903TF STS4DPF20L
Manifakti onsemi Infineon Technologies onsemi STMicroelectronics
Drenaj Sous Voltage (Vdss) 400V 60V 500V 20V
Nimewo pwodwi baz FQS4901 BSO615 FQS4903 STS4D
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Seri QFET® SIPMOS® QFET® STripFET™
Rds Sou (Max) @ Id, Vgs 4.2Ohm @ 225mA, 10V 110mOhm @ 3.1A, 10V 6.2Ohm @ 185mA, 10V 80mOhm @ 2A, 10V
Pòtay Charge (Qg) (Max) @ Vgs 7.5nC @ 10V 22.5nC @ 10V 8.2nC @ 10V 16nC @ 5V
Pouvwa - Max 2W 2W 2W 1.6W
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kapasite Antre (Ciss) (Max) @ Vds 210pF @ 25V 380pF @ 25V 200pF @ 25V 1350pF @ 25V
Kouran - Kontini Drain (Id) @ 25 ° C 450mA 3.1A, 2A 370mA 4A
Vgs (th) (Max) @ Id 4V @ 250µA 2V @ 20µA 4V @ 250µA 2.5V @ 250µA
Konfigirasyon 2 N-Channel (Dual) N and P-Channel 2 N-Channel (Dual) 2 P-Channel (Dual)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Founisè Aparèy pake 8-SOIC PG-DSO-8 8-SOIC 8-SOIC
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
FET Feature - Logic Level Gate - Logic Level Gate

FQS4901TF fich PDF

Download FQS4901TF PDF fich ak dokiman onsemi pou FQS4901TF - onsemi.

Enfòmasyon sou anviwònman an
onsemi REACH.pdf onsemi RoHS.pdf
PCN konsepsyon/spesifikasyon
Logo 17/Aug/2017.pdf Device Marking Update 02/Jul/2015.pdf
PCN anbalaj
Mult Devices 24/Oct/2017.pdf Mult MSL1 Pkg Rev 20/Dec/2018.pdf
PCN obsolescence/ eol
Mult Dev EOL 30/Jun/2022.pdf
Asanble PCN/orijin
Mult Dev Site Add 14/Oct/2020.pdf
Fich
FQS4901.pdf

Shipment

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Sètifikasyon & Manm

Wè plis
FQS4901TF Image

FQS4901TF

onsemi
32D-FQS4901TF

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