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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleNILMS4501NR2G
onsemi
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
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NILMS4501NR2G - onsemi

Manifakti Nimewo Pati
NILMS4501NR2G
Manifakti
onsemi
Allelco Nimewo Pati
32D-NILMS4501NR2G
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 24V 9.5A 4PLLP
Deskripsyon detaye
Pake
4-DFN
Done fèy
NILMS4501N.pdf
Konpare
Nan stok: 3670

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Espesifikasyon

Espesifikasyon NILMS4501NR2G Tech
onsemi - NILMS4501NR2G espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - NILMS4501NR2G

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 2V @ 250µA  
Vgs (Max) ±10V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 4-PLLP (6.2x5.2)  
Seri -  
Rds Sou (Max) @ Id, Vgs 13mOhm @ 6A, 10V  
Dissipasyon pouvwa (Max) 1.4W (Ta)  
Pake / Ka 4-DFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1500 pF @ 6 V  
Pòtay Charge (Qg) (Max) @ Vgs 25 nC @ 10 V  
Fèt tip N-Channel  
FET Feature Current Sensing  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 24 V  
Kouran - Kontini Drain (Id) @ 25 ° C 9.5A (Ta)  
Nimewo pwodwi baz NILMS45  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi NILMS4501NR2G.

Pwodwi atribi NILMS4501NR2G AUIRF1010Z FDN5632N-F085 AO4405
Nimewo Pati NILMS4501NR2G AUIRF1010Z FDN5632N-F085 AO4405
Manifakti onsemi International Rectifier onsemi UMW
FET Feature Current Sensing - - -
Nimewo pwodwi baz NILMS45 - FDN5632 -
Kapasite Antre (Ciss) (Max) @ Vds 1500 pF @ 6 V 2840 pF @ 25 V 475 pF @ 15 V 520 pF @ 15 V
Fèt tip N-Channel N-Channel N-Channel P-Channel
Dissipasyon pouvwa (Max) 1.4W (Ta) 140W (Tc) 1.1W (Ta) 3.1W (Ta)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pòtay Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 95 nC @ 10 V 12 nC @ 10 V 11 nC @ 10 V
Kouran - Kontini Drain (Id) @ 25 ° C 9.5A (Ta) 75A (Tc) 1.7A (Ta) 6A (Ta)
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Pakèt Tape & Reel (TR) Bulk Tape & Reel (TR) Tape & Reel (TR)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V - 4.5V, 10V 4.5V, 10V
Vgs (th) (Max) @ Id 2V @ 250µA 4V @ 250µA 3V @ 250µA 2.5V @ 250µA
Rds Sou (Max) @ Id, Vgs 13mOhm @ 6A, 10V 7.5mOhm @ 75A, 10V 82mOhm @ 1.7A, 10V 45mOhm @ 6A, 10V
Vgs (Max) ±10V - ±20V ±20V
Founisè Aparèy pake 4-PLLP (6.2x5.2) TO-220AB SOT-23-3 8-SOP
Mounting Kalite Surface Mount Through Hole Surface Mount Surface Mount
Pake / Ka 4-DFN TO-220-3 TO-236-3, SC-59, SOT-23-3 8-SOIC (0.154", 3.90mm Width)
Seri - HEXFET® Automotive, AEC-Q101, PowerTrench® UMW
Drenaj Sous Voltage (Vdss) 24 V 55 V 60 V 30 V

NILMS4501NR2G fich PDF

Download NILMS4501NR2G PDF fich ak dokiman onsemi pou NILMS4501NR2G - onsemi.

Enfòmasyon sou anviwònman an
onsemi REACH.pdf onsemi RoHS.pdf
PCN obsolescence/ eol
Multiple Devices 14/Apr/2010.pdf
Fich
NILMS4501N.pdf

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