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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleNVD5865NLT4G
NVD5865NLT4G Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

NVD5865NLT4G - onsemi

Manifakti Nimewo Pati
NVD5865NLT4G
Manifakti
onsemi
Allelco Nimewo Pati
32D-NVD5865NLT4G
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 60V 10A/46A DPAK
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
NVD5865NL.pdf
RoHs Status
Nan stok: 5370

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon NVD5865NLT4G Tech
onsemi - NVD5865NLT4G espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - NVD5865NLT4G

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 2V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake DPAK  
Seri Automotive, AEC-Q101  
Rds Sou (Max) @ Id, Vgs 16mOhm @ 19A, 10V  
Dissipasyon pouvwa (Max) 3.1W (Ta), 71W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1400 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 29 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 60 V  
Kouran - Kontini Drain (Id) @ 25 ° C 10A (Ta), 46A (Tc)  
Nimewo pwodwi baz NVD586  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi NVD5865NLT4G.

Pwodwi atribi NVD5865NLT4G NVD5863NLT4G NVD5806NT4G NVD5862NT4G
Nimewo Pati NVD5865NLT4G NVD5863NLT4G NVD5806NT4G NVD5862NT4G
Manifakti onsemi onsemi onsemi onsemi
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Seri Automotive, AEC-Q101 Automotive, AEC-Q101 Automotive, AEC-Q101 Automotive, AEC-Q101
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Founisè Aparèy pake DPAK DPAK DPAK DPAK
Vgs (Max) ±20V ±20V ±20V ±20V
Rds Sou (Max) @ Id, Vgs 16mOhm @ 19A, 10V 7.1mOhm @ 41A, 10V 19mOhm @ 15A, 10V 5.7mOhm @ 48A, 10V
Kapasite Antre (Ciss) (Max) @ Vds 1400 pF @ 25 V 3850 pF @ 25 V 860 pF @ 25 V 6000 pF @ 25 V
Dissipasyon pouvwa (Max) 3.1W (Ta), 71W (Tc) 3.1W (Ta), 96W (Tc) 40W (Tc) 4.1W (Ta), 115W (Tc)
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 10V
Nimewo pwodwi baz NVD586 NVD586 NVD580 NVD586
Kouran - Kontini Drain (Id) @ 25 ° C 10A (Ta), 46A (Tc) 14.9A (Ta), 82A (Tc) 33A (Tc) 18A (Ta), 98A (Tc)
Fèt tip N-Channel N-Channel N-Channel N-Channel
FET Feature - - - -
Drenaj Sous Voltage (Vdss) 60 V 60 V 40 V 60 V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs (th) (Max) @ Id 2V @ 250µA 3V @ 250µA 2.5V @ 250µA 4V @ 250µA
Pòtay Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 70 nC @ 10 V 38 nC @ 10 V 82 nC @ 10 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)

NVD5865NLT4G fich PDF

Download NVD5865NLT4G PDF fich ak dokiman onsemi pou NVD5865NLT4G - onsemi.

Enfòmasyon sou anviwònman an
onsemi REACH.pdf onsemi RoHS.pdf
PCN konsepsyon/spesifikasyon
Mult Dev EOL 21/Dec/2021.pdf Mold Compound Revision 24/Apr/2015.pdf Mold Compound Update 25/Feb/2015.pdf
PCN obsolescence/ eol
Mult Dev EOL 24/Jul/2019.pdf Reactivation 29/Aug/2018.pdf
Fich
NVD5865NL.pdf
Asanble PCN/orijin
Assembly/Test Site Add 29/Sep/2016.pdf

Shipment

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NVD5865NLT4G

onsemi
32D-NVD5865NLT4G

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