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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayNVJD5121NT1G
NVJD5121NT1G Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

NVJD5121NT1G - onsemi

Manifakti Nimewo Pati
NVJD5121NT1G
Manifakti
onsemi
Allelco Nimewo Pati
32D-NVJD5121NT1G
ECAD modèl
Pati Deskripsyon
MOSFET 2N-CH 60V 0.295A SC88
Deskripsyon detaye
Pake
6-TSSOP, SC-88, SOT-363
Done fèy
NTJD5121N, NVJD5121N.pdf
RoHs Status
Nan stok: 380250

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon NVJD5121NT1G Tech
onsemi - NVJD5121NT1G espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - NVJD5121NT1G

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 2.5V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake SC-88/SC70-6/SOT-363  
Seri Automotive, AEC-Q101  
Rds Sou (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V  
Pouvwa - Max 250mW  
Pake / Ka 6-TSSOP, SC-88, SOT-363  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 26pF @ 20V  
Pòtay Charge (Qg) (Max) @ Vgs 0.9nC @ 4.5V  
FET Feature -  
Drenaj Sous Voltage (Vdss) 60V  
Kouran - Kontini Drain (Id) @ 25 ° C 295mA  
Konfigirasyon 2 N-Channel (Dual)  
Nimewo pwodwi baz NVJD5121  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi NVJD5121NT1G.

Pwodwi atribi NVJD5121NT1G FDS9933 SI4554DY-T1-GE3 SI4910DY-T1-GE3
Nimewo Pati NVJD5121NT1G FDS9933 SI4554DY-T1-GE3 SI4910DY-T1-GE3
Manifakti onsemi Fairchild Semiconductor Vishay Siliconix Vishay Siliconix
Kapasite Antre (Ciss) (Max) @ Vds 26pF @ 20V 825pF @ 10V 690pF @ 20V 855pF @ 20V
Drenaj Sous Voltage (Vdss) 60V 20V 40V 40V
Pake / Ka 6-TSSOP, SC-88, SOT-363 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Pòtay Charge (Qg) (Max) @ Vgs 0.9nC @ 4.5V 20nC @ 4.5V 20nC @ 10V 32nC @ 10V
Konfigirasyon 2 N-Channel (Dual) 2 P-Channel (Dual) N and P-Channel 2 N-Channel (Dual)
Pakèt Tape & Reel (TR) Bulk Tape & Reel (TR) Tape & Reel (TR)
FET Feature - Logic Level Gate Logic Level Gate -
Seri Automotive, AEC-Q101 PowerTrench® TrenchFET® TrenchFET®
Founisè Aparèy pake SC-88/SC70-6/SOT-363 8-SOIC 8-SOIC 8-SOIC
Pouvwa - Max 250mW 900mW 3.1W, 3.2W 3.1W
Kouran - Kontini Drain (Id) @ 25 ° C 295mA 5A 8A 7.6A
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Nimewo pwodwi baz NVJD5121 FDS99 SI4554 SI4910
Rds Sou (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V 55mOhm @ 3.2A, 4.5V 24mOhm @ 6.8A, 10V 27mOhm @ 6A, 10V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Vgs (th) (Max) @ Id 2.5V @ 250µA 1.2V @ 250µA 2.2V @ 250µA 2V @ 250µA

NVJD5121NT1G fich PDF

Download NVJD5121NT1G PDF fich ak dokiman onsemi pou NVJD5121NT1G - onsemi.

Enfòmasyon sou anviwònman an
onsemi REACH.pdf onsemi RoHS.pdf
Fich
NTJD5121N, NVJD5121N.pdf
Asanble PCN/orijin
Lead Frame 28/May/2021.pdf

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Sètifikasyon & Manm

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NVJD5121NT1G Image

NVJD5121NT1G

onsemi
32D-NVJD5121NT1G

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