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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleMBRD835LT4G
MBRD835LT4G Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

MBRD835LT4G - onsemi

Manifakti Nimewo Pati
MBRD835LT4G
Manifakti
onsemi
Allelco Nimewo Pati
32D-MBRD835LT4G
ECAD modèl
Pati Deskripsyon
DIODE SCHOTTKY 35V 8A DPAK
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
MBRD835L.pdf
RoHs Status
Nan stok: 86250

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon MBRD835LT4G Tech
onsemi - MBRD835LT4G espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - MBRD835LT4G

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Voltage - Forward (Vf) (Max) @ Si 510 mV @ 8 A  
Voltage - DC ranvèse (Vr) (Max) 35 V  
Teknoloji Schottky  
Founisè Aparèy pake DPAK  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri SWITCHMODE™  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pwodwi atribi Valè atribi  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -65°C ~ 150°C  
Mounting Kalite Surface Mount  
Kouran - Reverse Leakage @ Vr 1.4 mA @ 35 V  
Kouran - Mwayèn Rectified (Io) 8A  
Kapasite @ Vr, F -  
Nimewo pwodwi baz MBRD835  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi MBRD835LT4G.

Pwodwi atribi MBRD835LT4G MBRD835LG MBRD835LT4 MBRF10100
Nimewo Pati MBRD835LT4G MBRD835LG MBRD835LT4 MBRF10100
Manifakti onsemi Fairchild Semiconductor onsemi Taiwan Semiconductor Corporation
Kouran - Mwayèn Rectified (Io) 8A 8A 8A 10A
Kouran - Reverse Leakage @ Vr 1.4 mA @ 35 V 1.4 mA @ 35 V 1.4 mA @ 35 V 100 µA @ 100 V
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220-2 Full Pack
Operating Tanperati - Junction -65°C ~ 150°C -65°C ~ 150°C - -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ Si 510 mV @ 8 A 510 mV @ 8 A 510 mV @ 8 A 850 mV @ 10 A
Kapasite @ Vr, F - - - -
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Teknoloji Schottky Schottky Schottky Schottky
Mounting Kalite Surface Mount Surface Mount Surface Mount Through Hole
Pakèt Tape & Reel (TR) Bulk Tape & Reel (TR) Tube
Founisè Aparèy pake DPAK DPAK DPAK ITO-220AC
Nimewo pwodwi baz MBRD835 - MBRD835 MBRF10100
Seri SWITCHMODE™ SWITCHMODE™ - -
Voltage - DC ranvèse (Vr) (Max) 35 V 35 V 35 V 100 V

MBRD835LT4G fich PDF

Download MBRD835LT4G PDF fich ak dokiman onsemi pou MBRD835LT4G - onsemi.

Enfòmasyon sou anviwònman an
onsemi REACH.pdf onsemi RoHS.pdf
Asanble PCN/orijin
Mult Dev 14/Mar/2023.pdf
Fich
MBRD835L.pdf

Shipment

Tan livrezon

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Metòd livrezon

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

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MBRD835LT4G Image

MBRD835LT4G

onsemi
32D-MBRD835LT4G

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