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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleBSC190N15NS3GATMA1
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

BSC190N15NS3GATMA1 - Infineon Technologies

Manifakti Nimewo Pati
BSC190N15NS3GATMA1
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-BSC190N15NS3GATMA1
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 150V 50A TDSON-8-1
Deskripsyon detaye
Pake
8-PowerTDFN
Done fèy
BSC190N15NS3GATMA1.pdf
RoHs Status
Nan stok: 18434

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon BSC190N15NS3GATMA1 Tech
Infineon Technologies - BSC190N15NS3GATMA1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - BSC190N15NS3GATMA1

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 90µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TDSON-8-1  
Seri OptiMOS™  
Rds Sou (Max) @ Id, Vgs 19mOhm @ 50A, 10V  
Dissipasyon pouvwa (Max) 125W (Tc)  
Pake / Ka 8-PowerTDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 2420 pF @ 75 V  
Pòtay Charge (Qg) (Max) @ Vgs 31 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 8V, 10V  
Drenaj Sous Voltage (Vdss) 150 V  
Kouran - Kontini Drain (Id) @ 25 ° C 50A (Tc)  
Nimewo pwodwi baz BSC190  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies BSC190N15NS3GATMA1.

Pwodwi atribi BSC190N15NS3GATMA1 BSC200P03LSG BSC205N10LSG BSC190N12NS3GATMA1
Nimewo Pati BSC190N15NS3GATMA1 BSC200P03LSG BSC205N10LSG BSC190N12NS3GATMA1
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon
Pòtay Charge (Qg) (Max) @ Vgs 31 nC @ 10 V 48.5 nC @ 10 V 41 nC @ 10 V -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Pakèt Tape & Reel (TR) Bulk Bulk -
Nimewo pwodwi baz BSC190 - - -
Fèt tip N-Channel P-Channel N-Channel -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Dissipasyon pouvwa (Max) 125W (Tc) 2.5W (Ta), 63W (Tc) 76W (Tc) -
Kondwi Voltage (Max Rds sou, Min Rds sou) 8V, 10V 10V 4.5V, 10V -
Mounting Kalite Surface Mount Surface Mount Surface Mount -
Kouran - Kontini Drain (Id) @ 25 ° C 50A (Tc) 9.9A (Ta), 12.5A (Tc) 7.4A (Ta), 45A (Tc) -
Kapasite Antre (Ciss) (Max) @ Vds 2420 pF @ 75 V 2430 pF @ 15 V 2900 pF @ 50 V -
Pake / Ka 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN -
Founisè Aparèy pake PG-TDSON-8-1 PG-TDSON-8-6 PG-TDSON-8-1 -
Rds Sou (Max) @ Id, Vgs 19mOhm @ 50A, 10V 20mOhm @ 12.5A, 10V 20.5mOhm @ 45A, 10V -
Seri OptiMOS™ OptiMOS® OptiMOS™ -
FET Feature - - - -
Vgs (Max) ±20V ±25V ±20V -
Vgs (th) (Max) @ Id 4V @ 90µA 1V @ 100µA 2.4V @ 43µA -
Drenaj Sous Voltage (Vdss) 150 V 30 V 100 V -

BSC190N15NS3GATMA1 fich PDF

Download BSC190N15NS3GATMA1 PDF fich ak dokiman Infineon Technologies pou BSC190N15NS3GATMA1 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN anbalaj
Mult Dev Pkg Box Chg 3/Jan/2018.pdf Mult Dev Reel Design Chg 2/Dec/2019.pdf
Asanble PCN/orijin
Assembly Site Add 20/Jun/2016.pdf
PCN Lòt
Multiple Changes 09/Jul/2014.pdf

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Sètifikasyon & Manm

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Infineon Technologies

BSC190N15NS3GATMA1

Infineon Technologies
32D-BSC190N15NS3GATMA1

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