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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleBSC200P03LSG
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

BSC200P03LSG - Infineon Technologies

Manifakti Nimewo Pati
BSC200P03LSG
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-BSC200P03LSG
ECAD modèl
Pati Deskripsyon
P-CHANNEL POWER MOSFET
Deskripsyon detaye
Pake
8-PowerTDFN
Done fèy
BSC200P03LSG.pdf
RoHs Status
Nan stok: 108030

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon BSC200P03LSG Tech
Infineon Technologies - BSC200P03LSG espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - BSC200P03LSG

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 1V @ 100µA  
Vgs (Max) ±25V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TDSON-8-6  
Seri OptiMOS®  
Rds Sou (Max) @ Id, Vgs 20mOhm @ 12.5A, 10V  
Dissipasyon pouvwa (Max) 2.5W (Ta), 63W (Tc)  
Pake / Ka 8-PowerTDFN  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 2430 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 48.5 nC @ 10 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 9.9A (Ta), 12.5A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies BSC200P03LSG.

Pwodwi atribi BSC200P03LSG BSC240N12NS3G BSC190N15NS3GATMA1 BSC205N10LSG
Nimewo Pati BSC200P03LSG BSC240N12NS3G BSC190N15NS3GATMA1 BSC205N10LSG
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Founisè Aparèy pake PG-TDSON-8-6 PG-TDSON-8-1 PG-TDSON-8-1 PG-TDSON-8-1
Kouran - Kontini Drain (Id) @ 25 ° C 9.9A (Ta), 12.5A (Tc) 37A (Tc) 50A (Tc) 7.4A (Ta), 45A (Tc)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pòtay Charge (Qg) (Max) @ Vgs 48.5 nC @ 10 V 27 nC @ 10 V 31 nC @ 10 V 41 nC @ 10 V
FET Feature - - - -
Vgs (th) (Max) @ Id 1V @ 100µA 4V @ 35µA 4V @ 90µA 2.4V @ 43µA
Seri OptiMOS® OptiMOS™ OptiMOS™ OptiMOS™
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 8V, 10V 4.5V, 10V
Fèt tip P-Channel N-Channel N-Channel N-Channel
Dissipasyon pouvwa (Max) 2.5W (Ta), 63W (Tc) 66W (Tc) 125W (Tc) 76W (Tc)
Kapasite Antre (Ciss) (Max) @ Vds 2430 pF @ 15 V 1900 pF @ 60 V 2420 pF @ 75 V 2900 pF @ 50 V
Pakèt Bulk Bulk Tape & Reel (TR) Bulk
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Rds Sou (Max) @ Id, Vgs 20mOhm @ 12.5A, 10V 24mOhm @ 31A, 10V 19mOhm @ 50A, 10V 20.5mOhm @ 45A, 10V
Pake / Ka 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN
Vgs (Max) ±25V ±20V ±20V ±20V
Drenaj Sous Voltage (Vdss) 30 V 120 V 150 V 100 V

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

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Infineon Technologies

BSC200P03LSG

Infineon Technologies
32D-BSC200P03LSG

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