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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIPA60R190P6XKSA1
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IPA60R190P6XKSA1 - Infineon Technologies

Manifakti Nimewo Pati
IPA60R190P6XKSA1
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IPA60R190P6XKSA1
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 600V 20.2A TO220-FP
Deskripsyon detaye
Pake
TO-220-3 Full Pack
Done fèy
IPA60R190P6XKSA1.pdf
RoHs Status
Nan stok: 29773

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IPA60R190P6XKSA1 Tech
Infineon Technologies - IPA60R190P6XKSA1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IPA60R190P6XKSA1

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4.5V @ 630µ  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TO220-FP  
Seri CoolMOS™ P6  
Rds Sou (Max) @ Id, Vgs 190mOhm @ 7.6A, 10V  
Dissipasyon pouvwa (Max) 34W (Tc)  
Pake / Ka TO-220-3 Full Pack  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 1750 pF @ 100 V  
Pòtay Charge (Qg) (Max) @ Vgs 37 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 600 V  
Kouran - Kontini Drain (Id) @ 25 ° C 20.2A (Tc)  
Nimewo pwodwi baz IPA60R  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IPA60R190P6XKSA1.

Pwodwi atribi IPA60R190P6XKSA1 IPA60R180P7XKSA1 IPA60R190C6 IPA60R230P6
Nimewo Pati IPA60R190P6XKSA1 IPA60R180P7XKSA1 IPA60R190C6 IPA60R230P6
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Seri CoolMOS™ P6 CoolMOS™ P7 CoolMOS™ CoolMOS™
Nimewo pwodwi baz IPA60R IPA60R - -
Vgs (th) (Max) @ Id 4.5V @ 630µ 4V @ 280µA 3.5V @ 630µA 4.5V @ 530µA
Drenaj Sous Voltage (Vdss) 600 V 650 V 600 V 600 V
Pakèt Tube Tube Bulk Bulk
Vgs (Max) ±20V ±20V ±20V ±20V
FET Feature - - - -
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Kapasite Antre (Ciss) (Max) @ Vds 1750 pF @ 100 V 1081 pF @ 400 V 1400 pF @ 100 V 1450 pF @ 100 V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Pòtay Charge (Qg) (Max) @ Vgs 37 nC @ 10 V 25 nC @ 10 V 63 nC @ 10 V 31 nC @ 10 V
Kouran - Kontini Drain (Id) @ 25 ° C 20.2A (Tc) 18A (Tc) 20.2A (Tc) 16.8A (Tc)
Pake / Ka TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack
Dissipasyon pouvwa (Max) 34W (Tc) 26W (Tc) 34W (Tc) 33W (Tc)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Founisè Aparèy pake PG-TO220-FP PG-TO220 Full Pack PG-TO220-3-111 PG-TO220-3-111
Rds Sou (Max) @ Id, Vgs 190mOhm @ 7.6A, 10V 180mOhm @ 5.6A, 10V 190mOhm @ 9.5A, 10V 230mOhm @ 6.4A, 10V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)

IPA60R190P6XKSA1 fich PDF

Download IPA60R190P6XKSA1 PDF fich ak dokiman Infineon Technologies pou IPA60R190P6XKSA1 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN konsepsyon/spesifikasyon
LeadFrame Design Chg 25/May/2016.pdf
Asanble PCN/orijin
Fab/Test Site Transfer 28/May/2015.pdf

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

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Infineon Technologies

IPA60R190P6XKSA1

Infineon Technologies
32D-IPA60R190P6XKSA1

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