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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIPA90R1K2C3XKSA1
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IPA90R1K2C3XKSA1 - Infineon Technologies

Manifakti Nimewo Pati
IPA90R1K2C3XKSA1
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IPA90R1K2C3XKSA1
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 900V 5.1A TO220-FP
Deskripsyon detaye
Pake
TO-220-3 Full Pack
Done fèy
IPA90R1K2C3XKSA1.pdf
RoHs Status
Nan stok: 3950

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IPA90R1K2C3XKSA1 Tech
Infineon Technologies - IPA90R1K2C3XKSA1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IPA90R1K2C3XKSA1

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 3.5V @ 310µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TO220-FP  
Seri CoolMOS™  
Rds Sou (Max) @ Id, Vgs 1.2Ohm @ 2.8A, 10V  
Dissipasyon pouvwa (Max) 31W (Tc)  
Pake / Ka TO-220-3 Full Pack  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 710 pF @ 100 V  
Pòtay Charge (Qg) (Max) @ Vgs 28 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 900 V  
Kouran - Kontini Drain (Id) @ 25 ° C 5.1A (Tc)  
Nimewo pwodwi baz IPA90R  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IPA90R1K2C3XKSA1.

Pwodwi atribi IPA90R1K2C3XKSA1 IPA95R450P7XKSA1 IPA80R650CEXKSA2 IPA90R800C3
Nimewo Pati IPA90R1K2C3XKSA1 IPA95R450P7XKSA1 IPA80R650CEXKSA2 IPA90R800C3
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Nimewo pwodwi baz IPA90R IPA95R450 IPA80R650 -
Vgs (Max) ±20V ±20V ±20V ±20V
Pakèt Tube Tube Tube Bulk
Seri CoolMOS™ CoolMOS™ P7 CoolMOS™ CoolMOS™
Pòtay Charge (Qg) (Max) @ Vgs 28 nC @ 10 V 35 nC @ 10 V 45 nC @ 10 V 42 nC @ 10 V
Drenaj Sous Voltage (Vdss) 900 V 950 V 800 V 900 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Feature - - - -
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V -
Kapasite Antre (Ciss) (Max) @ Vds 710 pF @ 100 V 1053 pF @ 400 V 1100 pF @ 100 V 1100 pF @ 100 V
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Dissipasyon pouvwa (Max) 31W (Tc) 30W (Tc) 33W (Tc) 33W (Tc)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Kouran - Kontini Drain (Id) @ 25 ° C 5.1A (Tc) 14A (Tc) 8A (Ta) 6.9A (Tc)
Rds Sou (Max) @ Id, Vgs 1.2Ohm @ 2.8A, 10V 450mOhm @ 7.2A, 10V 650mOhm @ 5.1A, 10V 800mOhm @ 4.1A, 10V
Founisè Aparèy pake PG-TO220-FP PG-TO220-FP TO-220-3F PG-TO220 Full Pack
Pake / Ka TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack
Fèt tip N-Channel N-Channel N-Channel N-Channel
Vgs (th) (Max) @ Id 3.5V @ 310µA 3.5V @ 360µA 3.9V @ 470µA 3.5V @ 460µA

IPA90R1K2C3XKSA1 fich PDF

Download IPA90R1K2C3XKSA1 PDF fich ak dokiman Infineon Technologies pou IPA90R1K2C3XKSA1 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN konsepsyon/spesifikasyon
LeadFrame Design Chg 25/May/2016.pdf
Asanble PCN/orijin
Fab/Test Site Transfer 28/May/2015.pdf
PCN obsolescence/ eol
Mult Dev EOL 30/Jun/2020.pdf

Shipment

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Metòd livrezon

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    +00852 9146 4856

Sètifikasyon & Manm

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Infineon Technologies

IPA90R1K2C3XKSA1

Infineon Technologies
32D-IPA90R1K2C3XKSA1

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