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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIPB019N08N3GATMA1
IPB019N08N3GATMA1 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IPB019N08N3GATMA1 - Infineon Technologies

Manifakti Nimewo Pati
IPB019N08N3GATMA1
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IPB019N08N3GATMA1
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 80V 180A TO263-7
Deskripsyon detaye
Pake
TO-263-7, D²Pak (6 Leads + Tab)
Done fèy
IPB019N08N3GATMA1.pdf
RoHs Status
Nan stok: 9557

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IPB019N08N3GATMA1 Tech
Infineon Technologies - IPB019N08N3GATMA1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IPB019N08N3GATMA1

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 3.5V @ 270µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TO263-7  
Seri OptiMOS™  
Rds Sou (Max) @ Id, Vgs 1.9mOhm @ 100A, 10V  
Dissipasyon pouvwa (Max) 300W (Tc)  
Pake / Ka TO-263-7, D²Pak (6 Leads + Tab)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 14200 pF @ 40 V  
Pòtay Charge (Qg) (Max) @ Vgs 206 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 6V, 10V  
Drenaj Sous Voltage (Vdss) 80 V  
Kouran - Kontini Drain (Id) @ 25 ° C 180A (Tc)  
Nimewo pwodwi baz IPB019  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IPB019N08N3GATMA1.

Pwodwi atribi IPB019N08N3GATMA1 IPB019N06L3GATMA1 IPB020N10N5ATMA1 IPB020N08N5ATMA1
Nimewo Pati IPB019N08N3GATMA1 IPB019N06L3GATMA1 IPB020N10N5ATMA1 IPB020N08N5ATMA1
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Rds Sou (Max) @ Id, Vgs 1.9mOhm @ 100A, 10V 1.9mOhm @ 100A, 10V 2mOhm @ 100A, 10V 2mOhm @ 100A, 10V
Founisè Aparèy pake PG-TO263-7 PG-TO263-3 PG-TO263-3 PG-TO263-3
Pake / Ka TO-263-7, D²Pak (6 Leads + Tab) TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pòtay Charge (Qg) (Max) @ Vgs 206 nC @ 10 V 166 nC @ 4.5 V 210 nC @ 10 V 166 nC @ 10 V
Drenaj Sous Voltage (Vdss) 80 V 60 V 100 V 80 V
Kouran - Kontini Drain (Id) @ 25 ° C 180A (Tc) 120A (Tc) 120A (Tc) 120A (Tc)
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Vgs (Max) ±20V ±20V ±20V ±20V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kapasite Antre (Ciss) (Max) @ Vds 14200 pF @ 40 V 28000 pF @ 30 V 15600 pF @ 50 V 12100 pF @ 40 V
FET Feature - - - -
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Kondwi Voltage (Max Rds sou, Min Rds sou) 6V, 10V 4.5V, 10V 6V, 10V 6V, 10V
Vgs (th) (Max) @ Id 3.5V @ 270µA 2.2V @ 196µA 3.8V @ 270µA 3.8V @ 208µA
Nimewo pwodwi baz IPB019 IPB019 IPB020 IPB020
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Dissipasyon pouvwa (Max) 300W (Tc) 250W (Tc) 375W (Tc) 300W (Tc)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Seri OptiMOS™ OptiMOS™ OptiMOS™ OptiMOS™

IPB019N08N3GATMA1 fich PDF

Download IPB019N08N3GATMA1 PDF fich ak dokiman Infineon Technologies pou IPB019N08N3GATMA1 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN anbalaj
Mult Dev Pkg Box Chg 3/Jan/2018.pdf
Asanble PCN/orijin
Mult Dev Wafer Chgs 22/Dec/2021.pdf

Shipment

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    +00852 9146 4856

Sètifikasyon & Manm

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IPB019N08N3GATMA1 Image

IPB019N08N3GATMA1

Infineon Technologies
32D-IPB019N08N3GATMA1

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