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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIPP120P04P4L03AKSA1
IPP120P04P4L03AKSA1 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IPP120P04P4L03AKSA1 - Infineon Technologies

Manifakti Nimewo Pati
IPP120P04P4L03AKSA1
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IPP120P04P4L03AKSA1
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 40V 120A TO220-3
Deskripsyon detaye
Pake
TO-220-3
Done fèy
IPP120P04P4L03AKSA1.pdf
RoHs Status
Nan stok: 4020

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon IPP120P04P4L03AKSA1 Tech
Infineon Technologies - IPP120P04P4L03AKSA1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IPP120P04P4L03AKSA1

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2.2V @ 340µA  
Vgs (Max) ±16V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TO220-3-1  
Seri Automotive, AEC-Q101, OptiMOS™  
Rds Sou (Max) @ Id, Vgs 3.4mOhm @ 100A, 10V  
Dissipasyon pouvwa (Max) 136W (Tc)  
Pake / Ka TO-220-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 15000 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 234 nC @ 10 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 40 V  
Kouran - Kontini Drain (Id) @ 25 ° C 120A (Tc)  
Nimewo pwodwi baz IPP120  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IPP120P04P4L03AKSA1.

Pwodwi atribi IPP120P04P4L03AKSA1 IPP120P04P404AKSA1 IPP126N10N3G IPP120N20NFDAKSA1
Nimewo Pati IPP120P04P4L03AKSA1 IPP120P04P404AKSA1 IPP126N10N3G IPP120N20NFDAKSA1
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Fèt tip P-Channel P-Channel N-Channel N-Channel
Dissipasyon pouvwa (Max) 136W (Tc) 136W (Tc) 94W (Tc) 300W (Tc)
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 10V - 10V
Kapasite Antre (Ciss) (Max) @ Vds 15000 pF @ 25 V 14790 pF @ 25 V 2500 pF @ 50 V 6650 pF @ 100 V
Rds Sou (Max) @ Id, Vgs 3.4mOhm @ 100A, 10V 3.8mOhm @ 100A, 10V 12.6mOhm @ 46A, 10V 12mOhm @ 84A, 10V
Nimewo pwodwi baz IPP120 IPP120P - IPP120
Seri Automotive, AEC-Q101, OptiMOS™ Automotive, AEC-Q101, OptiMOS™ - OptiMOS™
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Drenaj Sous Voltage (Vdss) 40 V 40 V 100 V 200 V
Vgs (Max) ±16V ±20V ±20V ±20V
Founisè Aparèy pake PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3 PG-TO220-3
Kouran - Kontini Drain (Id) @ 25 ° C 120A (Tc) 120A (Tc) 58A (Tc) 84A (Tc)
Vgs (th) (Max) @ Id 2.2V @ 340µA 4V @ 340µA 3.5V @ 46µA 4V @ 270µA
Pòtay Charge (Qg) (Max) @ Vgs 234 nC @ 10 V 205 nC @ 10 V 35 nC @ 10 V 87 nC @ 10 V
Pakèt Tube Tube - Tube
Pake / Ka TO-220-3 TO-220-3 TO-220-3 TO-220-3
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
FET Feature - - - -

IPP120P04P4L03AKSA1 fich PDF

Download IPP120P04P4L03AKSA1 PDF fich ak dokiman Infineon Technologies pou IPP120P04P4L03AKSA1 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN konsepsyon/spesifikasyon
Mult Dev DS Update 17/Apr/2020.pdf Mult Dev Design Chg 9/Oct/2019.pdf
Asanble PCN/orijin
Mult Dev Assembly/Status 6/Jul/2022.pdf

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IPP120P04P4L03AKSA1 Image

IPP120P04P4L03AKSA1

Infineon Technologies
32D-IPP120P04P4L03AKSA1

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