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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIPP126N10N3G
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IPP126N10N3G - Infineon Technologies

Manifakti Nimewo Pati
IPP126N10N3G
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IPP126N10N3G
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 58A TO220-3
Deskripsyon detaye
Pake
TO-220-3
Done fèy
IPP126N10N3G.pdf
Nan stok: 3970

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Espesifikasyon

Espesifikasyon IPP126N10N3G Tech
Infineon Technologies - IPP126N10N3G espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IPP126N10N3G

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 3.5V @ 46µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TO220-3  
Rds Sou (Max) @ Id, Vgs 12.6mOhm @ 46A, 10V  
Dissipasyon pouvwa (Max) 94W (Tc)  
Pake / Ka TO-220-3  
Operating Tanperati -55°C ~ 175°C (TJ)  
Pwodwi atribi Valè atribi  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 2500 pF @ 50 V  
Pòtay Charge (Qg) (Max) @ Vgs 35 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) -  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 58A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IPP126N10N3G.

Pwodwi atribi IPP126N10N3G IPP120P04P4L03AKSA1 IPP120P04P404AKSA1 IPP120N20NFDAKSA1
Nimewo Pati IPP126N10N3G IPP120P04P4L03AKSA1 IPP120P04P404AKSA1 IPP120N20NFDAKSA1
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Pòtay Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 234 nC @ 10 V 205 nC @ 10 V 87 nC @ 10 V
Kondwi Voltage (Max Rds sou, Min Rds sou) - 4.5V, 10V 10V 10V
Founisè Aparèy pake PG-TO220-3 PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3
Drenaj Sous Voltage (Vdss) 100 V 40 V 40 V 200 V
Dissipasyon pouvwa (Max) 94W (Tc) 136W (Tc) 136W (Tc) 300W (Tc)
FET Feature - - - -
Rds Sou (Max) @ Id, Vgs 12.6mOhm @ 46A, 10V 3.4mOhm @ 100A, 10V 3.8mOhm @ 100A, 10V 12mOhm @ 84A, 10V
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kapasite Antre (Ciss) (Max) @ Vds 2500 pF @ 50 V 15000 pF @ 25 V 14790 pF @ 25 V 6650 pF @ 100 V
Pake / Ka TO-220-3 TO-220-3 TO-220-3 TO-220-3
Vgs (th) (Max) @ Id 3.5V @ 46µA 2.2V @ 340µA 4V @ 340µA 4V @ 270µA
Fèt tip N-Channel P-Channel P-Channel N-Channel
Kouran - Kontini Drain (Id) @ 25 ° C 58A (Tc) 120A (Tc) 120A (Tc) 84A (Tc)
Vgs (Max) ±20V ±16V ±20V ±20V
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

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Infineon Technologies

IPP126N10N3G

Infineon Technologies
32D-IPP126N10N3G

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