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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF3805PBF
IRF3805PBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF3805PBF - Infineon Technologies

Manifakti Nimewo Pati
IRF3805PBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF3805PBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 55V 75A TO220AB
Deskripsyon detaye
Pake
TO-220-3
Done fèy
IRF3805PBF.pdf
RoHs Status
Nan stok: 26756

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRF3805PBF Tech
Infineon Technologies - IRF3805PBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF3805PBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220AB  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 3.3mOhm @ 75A, 10V  
Dissipasyon pouvwa (Max) 300W (Tc)  
Pake / Ka TO-220-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 7960 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 290 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 55 V  
Kouran - Kontini Drain (Id) @ 25 ° C 75A (Tc)  
Nimewo pwodwi baz IRF3805  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF3805PBF.

Pwodwi atribi IRF3805PBF IRF3805 IRF3717TRPBF IRF3805S-7PPBF
Nimewo Pati IRF3805PBF IRF3805 IRF3717TRPBF IRF3805S-7PPBF
Manifakti Infineon Technologies Infineon Technologies International Rectifier International Rectifier
Mounting Kalite Through Hole Through Hole Surface Mount Surface Mount
Pakèt Tube Tube Bulk Bulk
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
FET Feature - - - -
Pake / Ka TO-220-3 TO-220-3 8-SOIC (0.154", 3.90mm Width) TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Founisè Aparèy pake TO-220AB TO-220AB 8-SO D2PAK (7-Lead)
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Dissipasyon pouvwa (Max) 300W (Tc) 330W (Tc) 2.5W (Ta) 300W (Tc)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Drenaj Sous Voltage (Vdss) 55 V 55 V 20 V 55 V
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 2.45V @ 250µA 4V @ 250µA
Rds Sou (Max) @ Id, Vgs 3.3mOhm @ 75A, 10V 3.3mOhm @ 75A, 10V 4.4mOhm @ 20A, 10V 2.6mOhm @ 140A, 10V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 4.5V, 10V 10V
Nimewo pwodwi baz IRF3805 - - -
Vgs (Max) ±20V ±20V ±20V ±20V
Kapasite Antre (Ciss) (Max) @ Vds 7960 pF @ 25 V 7960 pF @ 25 V 2890 pF @ 10 V 7820 pF @ 25 V
Kouran - Kontini Drain (Id) @ 25 ° C 75A (Tc) 75A (Tc) 20A (Ta) 160A (Tc)
Pòtay Charge (Qg) (Max) @ Vgs 290 nC @ 10 V 290 nC @ 10 V 33 nC @ 4.5 V 200 nC @ 10 V

IRF3805PBF fich PDF

Download IRF3805PBF PDF fich ak dokiman Infineon Technologies pou IRF3805PBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN anbalaj
Package Drawing Update 19/Aug/2015.pdf Mult Device Standard Label Chg 29/Sep/2017.pdf
Asanble PCN/orijin
Mult Dev Wafer Site Chg 18/Dec/2020.pdf
PCN Lòt
Tube Pkg Qty Standardization 18/Aug/2016.pdf
PCN konsepsyon/spesifikasyon
Mult Dev No Format/Barcode Label 15/Jan/2019.pdf Mult Dev Label Chgs Aug/2020.pdf

Shipment

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Sètifikasyon & Manm

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IRF3805PBF Image

IRF3805PBF

Infineon Technologies
32D-IRF3805PBF

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