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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF3805SPBF
IRF3805SPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF3805SPBF - Infineon Technologies

Manifakti Nimewo Pati
IRF3805SPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF3805SPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 55V 75A D2PAK
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
IRF3805SPBF.pdf
RoHs Status
Nan stok: 4050

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Espesifikasyon

Espesifikasyon IRF3805SPBF Tech
Infineon Technologies - IRF3805SPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF3805SPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D2PAK  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 3.3mOhm @ 75A, 10V  
Dissipasyon pouvwa (Max) 300W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 7960 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 290 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 55 V  
Kouran - Kontini Drain (Id) @ 25 ° C 75A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF3805SPBF.

Pwodwi atribi IRF3805SPBF IRF3808STRRPBF IRF3805LPBF IRF3805S
Nimewo Pati IRF3805SPBF IRF3808STRRPBF IRF3805LPBF IRF3805S
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Pakèt Tube Tape & Reel (TR) Tube Tube
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Dissipasyon pouvwa (Max) 300W (Tc) 200W (Tc) 300W (Tc) 330W (Tc)
Drenaj Sous Voltage (Vdss) 55 V 75 V 55 V 55 V
Founisè Aparèy pake D2PAK D2PAK TO-262 D2PAK
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Kouran - Kontini Drain (Id) @ 25 ° C 75A (Tc) 106A (Tc) 75A (Tc) 75A (Tc)
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kapasite Antre (Ciss) (Max) @ Vds 7960 pF @ 25 V 5310 pF @ 25 V 7960 pF @ 25 V 7960 pF @ 25 V
FET Feature - - - -
Mounting Kalite Surface Mount Surface Mount Through Hole Surface Mount
Fèt tip N-Channel N-Channel N-Channel N-Channel
Rds Sou (Max) @ Id, Vgs 3.3mOhm @ 75A, 10V 7mOhm @ 82A, 10V 3.3mOhm @ 75A, 10V 3.3mOhm @ 75A, 10V
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Vgs (Max) ±20V ±20V ±20V ±20V
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Pòtay Charge (Qg) (Max) @ Vgs 290 nC @ 10 V 220 nC @ 10 V 290 nC @ 10 V 290 nC @ 10 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V

IRF3805SPBF fich PDF

Download IRF3805SPBF PDF fich ak dokiman Infineon Technologies pou IRF3805SPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN anbalaj
Mult Device Standard Label Chg 29/Sep/2017.pdf Barcode Label Update 24/Feb/2017.pdf
PCN Lòt
Tube Pkg Qty Standardization 18/Aug/2016.pdf
Asanble PCN/orijin
Backend Wafer Transfer 23/Oct/2013.pdf
PCN pati estati chanjman
Mult Dev Tube Pkg Disc 12/Jun/2018.pdf
PCN konsepsyon/spesifikasyon
Copper Plating Update 31/Aug/2015.pdf Mult Dev No Format/Barcode Label 15/Jan/2019.pdf

Shipment

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IRF3805SPBF Image

IRF3805SPBF

Infineon Technologies
32D-IRF3805SPBF

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