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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF5800TRPBF
IRF5800TRPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF5800TRPBF - Infineon Technologies

Manifakti Nimewo Pati
IRF5800TRPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF5800TRPBF
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 30V 4A MICRO6
Deskripsyon detaye
Pake
SOT-23-6 Thin, TSOT-23-6
Done fèy
IRF5800PbF.pdf
Nan stok: 4980

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Kantite

Espesifikasyon

Espesifikasyon IRF5800TRPBF Tech
Infineon Technologies - IRF5800TRPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF5800TRPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 1V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake Micro6™(TSOP-6)  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 85mOhm @ 4A, 10V  
Dissipasyon pouvwa (Max) 2W (Ta)  
Pake / Ka SOT-23-6 Thin, TSOT-23-6  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 535 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 17 nC @ 10 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 4A (Ta)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF5800TRPBF.

Pwodwi atribi IRF5800TRPBF IRF5801TRPBF IRF540ZS IRF543
Nimewo Pati IRF5800TRPBF IRF5801TRPBF IRF540ZS IRF543
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Harris Corporation
Vgs (th) (Max) @ Id 1V @ 250µA 5.5V @ 250µA 4V @ 250µA 4V @ 250µA
Founisè Aparèy pake Micro6™(TSOP-6) Micro6™(TSOP-6) D2PAK TO-220AB
Drenaj Sous Voltage (Vdss) 30 V 200 V 100 V 80 V
Kapasite Antre (Ciss) (Max) @ Vds 535 pF @ 25 V 88 pF @ 25 V 1770 pF @ 25 V 1450 pF @ 25 V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tube Bulk
Pòtay Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 3.9 nC @ 10 V 63 nC @ 10 V 59 nC @ 10 V
Mounting Kalite Surface Mount Surface Mount Surface Mount Through Hole
FET Feature - - - -
Vgs (Max) ±20V ±30V ±20V ±20V
Rds Sou (Max) @ Id, Vgs 85mOhm @ 4A, 10V 2.2Ohm @ 360mA, 10V 26.5mOhm @ 22A, 10V 100mOhm @ 17A, 10V
Kouran - Kontini Drain (Id) @ 25 ° C 4A (Ta) 600mA (Ta) 36A (Tc) 25A (Tc)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 10V 10V 10V
Fèt tip P-Channel N-Channel N-Channel N-Channel
Dissipasyon pouvwa (Max) 2W (Ta) 2W (Ta) 92W (Tc) 150W (Tc)
Seri HEXFET® HEXFET® HEXFET® -
Pake / Ka SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)

IRF5800TRPBF fich PDF

Download IRF5800TRPBF PDF fich ak dokiman Infineon Technologies pou IRF5800TRPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN obsolescence/ eol
Gen 8 Rev2 08/Jul/2011.pdf
Fich
IRF5800PbF.pdf

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IRF5800TRPBF

Infineon Technologies
32D-IRF5800TRPBF

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