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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF5802
IRF5802 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF5802 - Infineon Technologies

Manifakti Nimewo Pati
IRF5802
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF5802
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 150V 900MA MICRO6
Deskripsyon detaye
Pake
SOT-23-6 Thin, TSOT-23-6
Done fèy
IRF5802.pdf
Nan stok: 4770

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Espesifikasyon

Espesifikasyon IRF5802 Tech
Infineon Technologies - IRF5802 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF5802

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 5.5V @ 250µA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake Micro6™(TSOP-6)  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 1.2Ohm @ 540mA, 10V  
Dissipasyon pouvwa (Max) 2W (Ta)  
Pake / Ka SOT-23-6 Thin, TSOT-23-6  
Pwodwi atribi Valè atribi  
Pakèt Tube  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 88 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 6.8 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 150 V  
Kouran - Kontini Drain (Id) @ 25 ° C 900mA (Ta)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF5802.

Pwodwi atribi IRF5802 IRF5803D2PBF IRF541 IRF5803D2TR
Nimewo Pati IRF5802 IRF5803D2PBF IRF541 IRF5803D2TR
Manifakti Infineon Technologies Infineon Technologies Harris Corporation Infineon Technologies
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Dissipasyon pouvwa (Max) 2W (Ta) 2W (Ta) 150W (Tc) 2W (Ta)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 4.5V, 10V 10V 4.5V, 10V
Pòtay Charge (Qg) (Max) @ Vgs 6.8 nC @ 10 V 37 nC @ 10 V 59 nC @ 10 V 37 nC @ 10 V
Kouran - Kontini Drain (Id) @ 25 ° C 900mA (Ta) 3.4A (Ta) 28A (Tc) 3.4A (Ta)
Vgs (Max) ±30V ±20V ±20V ±20V
Drenaj Sous Voltage (Vdss) 150 V 40 V 80 V 40 V
Pake / Ka SOT-23-6 Thin, TSOT-23-6 8-SOIC (0.154", 3.90mm Width) TO-220-3 8-SOIC (0.154", 3.90mm Width)
Fèt tip N-Channel P-Channel N-Channel P-Channel
Vgs (th) (Max) @ Id 5.5V @ 250µA 3V @ 250µA 4V @ 250µA 3V @ 250µA
Kapasite Antre (Ciss) (Max) @ Vds 88 pF @ 25 V 1110 pF @ 25 V 1450 pF @ 25 V 1110 pF @ 25 V
FET Feature - Schottky Diode (Isolated) - Schottky Diode (Isolated)
Mounting Kalite Surface Mount Surface Mount Through Hole Surface Mount
Founisè Aparèy pake Micro6™(TSOP-6) 8-SO TO-220AB 8-SO
Seri HEXFET® FETKY™ - FETKY™
Pakèt Tube Tube Bulk Tape & Reel (TR)
Rds Sou (Max) @ Id, Vgs 1.2Ohm @ 540mA, 10V 112mOhm @ 3.4A, 10V 77mOhm @ 17A, 10V 112mOhm @ 3.4A, 10V

IRF5802 fich PDF

Download IRF5802 PDF fich ak dokiman Infineon Technologies pou IRF5802 - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
Fich
IRF5802.pdf

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IRF5802 Image

IRF5802

Infineon Technologies
32D-IRF5802

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