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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF5803D2TRPBF
IRF5803D2TRPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF5803D2TRPBF - Infineon Technologies

Manifakti Nimewo Pati
IRF5803D2TRPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF5803D2TRPBF
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 40V 3.4A 8SO
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
IRF5803D2PbF.pdf
Nan stok: 4090

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Kantite

Espesifikasyon

Espesifikasyon IRF5803D2TRPBF Tech
Infineon Technologies - IRF5803D2TRPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF5803D2TRPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 3V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SO  
Seri FETKY™  
Rds Sou (Max) @ Id, Vgs 112mOhm @ 3.4A, 10V  
Dissipasyon pouvwa (Max) 2W (Ta)  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1110 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 37 nC @ 10 V  
Fèt tip P-Channel  
FET Feature Schottky Diode (Isolated)  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 40 V  
Kouran - Kontini Drain (Id) @ 25 ° C 3.4A (Ta)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF5803D2TRPBF.

Pwodwi atribi IRF5803D2TRPBF IRF5803D2 IRF5802TR IRF5804TRPBF
Nimewo Pati IRF5803D2TRPBF IRF5803D2 IRF5802TR IRF5804TRPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Drenaj Sous Voltage (Vdss) 40 V 40 V 150 V 40 V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
FET Feature Schottky Diode (Isolated) Schottky Diode (Isolated) - -
Kouran - Kontini Drain (Id) @ 25 ° C 3.4A (Ta) 3.4A (Ta) 900mA (Ta) 2.5A (Ta)
Vgs (Max) ±20V ±20V - ±20V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Fèt tip P-Channel P-Channel N-Channel P-Channel
Dissipasyon pouvwa (Max) 2W (Ta) 2W (Ta) - 2W (Ta)
Pòtay Charge (Qg) (Max) @ Vgs 37 nC @ 10 V 37 nC @ 10 V 6.8 nC @ 10 V 8.5 nC @ 10 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V - 4.5V, 10V
Kapasite Antre (Ciss) (Max) @ Vds 1110 pF @ 25 V 1110 pF @ 25 V 88 pF @ 25 V 680 pF @ 25 V
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6
Seri FETKY™ FETKY™ - HEXFET®
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (th) (Max) @ Id 3V @ 250µA 3V @ 250µA 5.5V @ 250µA 3V @ 250µA
Pakèt Tape & Reel (TR) Tube Cut Tape (CT) Tape & Reel (TR)
Founisè Aparèy pake 8-SO 8-SO Micro6™(TSOP-6) Micro6™(TSOP-6)
Rds Sou (Max) @ Id, Vgs 112mOhm @ 3.4A, 10V 112mOhm @ 3.4A, 10V 1.2Ohm @ 540mA, 10V 198mOhm @ 2.5A, 10V

IRF5803D2TRPBF fich PDF

Download IRF5803D2TRPBF PDF fich ak dokiman Infineon Technologies pou IRF5803D2TRPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN anbalaj
Packing Material Update 16/Sep/2016.pdf Barcode Label Update 24/Feb/2017.pdf
PCN obsolescence/ eol
PMD Mosfets Obs 04/Jun/2015.pdf
Fich
IRF5803D2PbF.pdf
Asanble PCN/orijin
Qualification Wafer Site 29/Sep/2014.pdf

Shipment

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IRF5803D2TRPBF

Infineon Technologies
32D-IRF5803D2TRPBF

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