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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayIRF7311TR
IRF7311TR Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF7311TR - Infineon Technologies

Manifakti Nimewo Pati
IRF7311TR
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF7311TR
ECAD modèl
Pati Deskripsyon
MOSFET 2N-CH 20V 6.6A 8-SOIC
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
IRF7311.pdf
Nan stok: 4970

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Espesifikasyon

Espesifikasyon IRF7311TR Tech
Infineon Technologies - IRF7311TR espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF7311TR

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 700mV @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SO  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 29mOhm @ 6A, 4.5V  
Pouvwa - Max 2W  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 900pF @ 15V  
Pòtay Charge (Qg) (Max) @ Vgs 27nC @ 4.5V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 20V  
Kouran - Kontini Drain (Id) @ 25 ° C 6.6A  
Konfigirasyon 2 N-Channel (Dual)  
Nimewo pwodwi baz IRF731  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF7311TR.

Pwodwi atribi IRF7311TR IRF7313PBF IRF7311TRPBF IRF730PBF MOS
Nimewo Pati IRF7311TR IRF7313PBF IRF7311TRPBF IRF730PBF MOS
Manifakti Infineon Technologies International Rectifier Infineon Technologies Electro-Films (EFI) / Vishay
Pòtay Charge (Qg) (Max) @ Vgs 27nC @ 4.5V 33nC @ 10V 27nC @ 4.5V -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Drenaj Sous Voltage (Vdss) 20V 30V 20V -
Pakèt Tape & Reel (TR) Bulk Tape & Reel (TR) -
Nimewo pwodwi baz IRF731 IRF731 IRF731 -
FET Feature Logic Level Gate - Logic Level Gate -
Kapasite Antre (Ciss) (Max) @ Vds 900pF @ 15V 650pF @ 25V 900pF @ 15V -
Mounting Kalite Surface Mount Surface Mount Surface Mount -
Founisè Aparèy pake 8-SO 8-SO 8-SO -
Seri HEXFET® HEXFET® HEXFET® -
Rds Sou (Max) @ Id, Vgs 29mOhm @ 6A, 4.5V 29mOhm @ 5.8A, 10V 29mOhm @ 6A, 4.5V -
Pouvwa - Max 2W 2W 2W -
Konfigirasyon 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) -
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) -
Vgs (th) (Max) @ Id 700mV @ 250µA 1V @ 250µA 700mV @ 250µA -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Kouran - Kontini Drain (Id) @ 25 ° C 6.6A 6.5A 6.6A -

IRF7311TR fich PDF

Download IRF7311TR PDF fich ak dokiman Infineon Technologies pou IRF7311TR - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
Fich
IRF7311.pdf

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IRF7311TR Image

IRF7311TR

Infineon Technologies
32D-IRF7311TR

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