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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF730S
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF730S - Vishay Siliconix

Manifakti Nimewo Pati
IRF730S
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-IRF730S
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 400V 5.5A D2PAK
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
IRF730S, SiHF730S.pdf
Nan stok: 3950

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRF730S Tech
Vishay Siliconix - IRF730S espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - IRF730S

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D²PAK (TO-263)  
Seri -  
Rds Sou (Max) @ Id, Vgs 1Ohm @ 3.3A, 10V  
Dissipasyon pouvwa (Max) 3.1W (Ta), 74W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 700 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 38 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 400 V  
Kouran - Kontini Drain (Id) @ 25 ° C 5.5A (Tc)  
Nimewo pwodwi baz IRF730  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix IRF730S.

Pwodwi atribi IRF730S IRF730BPBF IRF731 IRF730PBF
Nimewo Pati IRF730S IRF730BPBF IRF731 IRF730PBF
Manifakti Vishay Siliconix Vishay Siliconix Harris Corporation Vishay Siliconix
Founisè Aparèy pake D²PAK (TO-263) TO-220AB TO-220AB TO-220AB
Dissipasyon pouvwa (Max) 3.1W (Ta), 74W (Tc) 104W (Tc) 75W (Tc) 74W (Tc)
Seri - - - -
Pòtay Charge (Qg) (Max) @ Vgs 38 nC @ 10 V 18 nC @ 10 V 35 nC @ 10 V 38 nC @ 10 V
Mounting Kalite Surface Mount Through Hole Through Hole Through Hole
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Pakèt Tube Tube Bulk Tube
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Kapasite Antre (Ciss) (Max) @ Vds 700 pF @ 25 V 311 pF @ 100 V 600 pF @ 25 V 700 pF @ 25 V
Rds Sou (Max) @ Id, Vgs 1Ohm @ 3.3A, 10V 1Ohm @ 3A, 10V 1Ohm @ 3A, 10V 1Ohm @ 3.3A, 10V
Kouran - Kontini Drain (Id) @ 25 ° C 5.5A (Tc) 6A (Tc) 5.5A (Tc) 5.5A (Tc)
FET Feature - - - -
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3 TO-220-3
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (th) (Max) @ Id 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA
Vgs (Max) ±20V ±30V ±20V ±20V
Nimewo pwodwi baz IRF730 IRF730 - IRF730
Fèt tip N-Channel N-Channel N-Channel N-Channel
Drenaj Sous Voltage (Vdss) 400 V 400 V 350 V 400 V

IRF730S fich PDF

Download IRF730S PDF fich ak dokiman Vishay Siliconix pou IRF730S - Vishay Siliconix.

Fich
IRF730S, SiHF730S.pdf

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Sètifikasyon & Manm

Wè plis
Vishay Siliconix

IRF730S

Vishay Siliconix
32D-IRF730S

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