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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF7739L2TR1PBF
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF7739L2TR1PBF - Infineon Technologies

Manifakti Nimewo Pati
IRF7739L2TR1PBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF7739L2TR1PBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 40V 46A DIRECTFET
Deskripsyon detaye
Pake
DirectFET™ Isometric L8
Done fèy
IRF7739L2PBF.pdf
Nan stok: 3750

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon IRF7739L2TR1PBF Tech
Infineon Technologies - IRF7739L2TR1PBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF7739L2TR1PBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake DirectFET™ Isometric L8  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 1mOhm @ 160A, 10V  
Dissipasyon pouvwa (Max) 3.8W (Ta), 125W (Tc)  
Pake / Ka DirectFET™ Isometric L8  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 11880 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 330 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 40 V  
Kouran - Kontini Drain (Id) @ 25 ° C 46A (Ta), 375A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF7739L2TR1PBF.

Pwodwi atribi IRF7739L2TR1PBF IRF7726TR IRF7706TR IRF7705TRPBF
Nimewo Pati IRF7739L2TR1PBF IRF7726TR IRF7706TR IRF7705TRPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Drenaj Sous Voltage (Vdss) 40 V 30 V 30 V 30 V
Rds Sou (Max) @ Id, Vgs 1mOhm @ 160A, 10V 26mOhm @ 7A, 10V 22mOhm @ 7A, 10V 18mOhm @ 8A, 10V
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
FET Feature - - - -
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Founisè Aparèy pake DirectFET™ Isometric L8 Micro8™ 8-TSSOP 8-TSSOP
Pake / Ka DirectFET™ Isometric L8 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width)
Pòtay Charge (Qg) (Max) @ Vgs 330 nC @ 10 V 69 nC @ 10 V 72 nC @ 10 V 88 nC @ 10 V
Fèt tip N-Channel P-Channel P-Channel P-Channel
Kapasite Antre (Ciss) (Max) @ Vds 11880 pF @ 25 V 2204 pF @ 25 V 2211 pF @ 25 V 2774 pF @ 25 V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Vgs (Max) ±20V ±20V ±20V ±20V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Dissipasyon pouvwa (Max) 3.8W (Ta), 125W (Tc) 1.79W (Ta) 1.51W (Ta) 1.5W (Ta)
Vgs (th) (Max) @ Id 4V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Kouran - Kontini Drain (Id) @ 25 ° C 46A (Ta), 375A (Tc) 7A (Ta) 7A (Ta) 8A (Tc)
Seri HEXFET® HEXFET® HEXFET® HEXFET®

IRF7739L2TR1PBF fich PDF

Download IRF7739L2TR1PBF PDF fich ak dokiman Infineon Technologies pou IRF7739L2TR1PBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN obsolescence/ eol
Multiple Devices 20/Dec/2013.pdf
Asanble PCN/orijin
DirectFET Backend Wafer Processing 23/Oct/2013.pdf
Fich
IRF7739L2PBF.pdf

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IRF7739L2TR1PBF

Infineon Technologies
32D-IRF7739L2TR1PBF

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