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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayIRF7750GTRPBF
IRF7750GTRPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF7750GTRPBF - Infineon Technologies

Manifakti Nimewo Pati
IRF7750GTRPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF7750GTRPBF
ECAD modèl
Pati Deskripsyon
MOSFET 2P-CH 20V 4.7A 8TSSOP
Deskripsyon detaye
Pake
8-TSSOP (0.173", 4.40mm Width)
Done fèy
IRF7750GPBF.pdf
Nan stok: 4740

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Kantite

Espesifikasyon

Espesifikasyon IRF7750GTRPBF Tech
Infineon Technologies - IRF7750GTRPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF7750GTRPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 1.2V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-TSSOP  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 30mOhm @ 4.7A, 4.5V  
Pouvwa - Max 1W  
Pake / Ka 8-TSSOP (0.173", 4.40mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1700pF @ 15V  
Pòtay Charge (Qg) (Max) @ Vgs 39nC @ 5V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 20V  
Kouran - Kontini Drain (Id) @ 25 ° C 4.7A  
Konfigirasyon 2 P-Channel (Dual)  
Nimewo pwodwi baz IRF7750  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF7750GTRPBF.

Pwodwi atribi IRF7750GTRPBF IRF7751TRPBF IRF7750TRPBF IRF7755TR
Nimewo Pati IRF7750GTRPBF IRF7751TRPBF IRF7750TRPBF IRF7755TR
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Founisè Aparèy pake 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP
Pouvwa - Max 1W 1W 1W 1W
Rds Sou (Max) @ Id, Vgs 30mOhm @ 4.7A, 4.5V 35mOhm @ 4.5A, 10V 30mOhm @ 4.7A, 4.5V 51mOhm @ 3.7A, 4.5V
Kouran - Kontini Drain (Id) @ 25 ° C 4.7A 4.5A 4.7A 3.9A
Pake / Ka 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Konfigirasyon 2 P-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual)
Vgs (th) (Max) @ Id 1.2V @ 250µA 2.5V @ 250µA 1.2V @ 250µA 1.2V @ 250µA
Nimewo pwodwi baz IRF7750 IRF775 IRF7750 IRF775
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Pòtay Charge (Qg) (Max) @ Vgs 39nC @ 5V 44nC @ 10V 39nC @ 5V 17nC @ 4.5V
Drenaj Sous Voltage (Vdss) 20V 30V 20V 20V
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Kapasite Antre (Ciss) (Max) @ Vds 1700pF @ 15V 1464pF @ 25V 1700pF @ 15V 1090pF @ 15V

IRF7750GTRPBF fich PDF

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Fich
IRF7750GPBF.pdf

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32D-IRF7750GTRPBF

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