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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF7805ZGTRPBF
IRF7805ZGTRPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF7805ZGTRPBF - Infineon Technologies

Manifakti Nimewo Pati
IRF7805ZGTRPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF7805ZGTRPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 30V 16A 8SO
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
IRF7805ZGTRPBF.pdf
Nan stok: 5130

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Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRF7805ZGTRPBF Tech
Infineon Technologies - IRF7805ZGTRPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF7805ZGTRPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2.25V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SO  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 6.8mOhm @ 16A, 10V  
Dissipasyon pouvwa (Max) 2.5W (Ta)  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 2080 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 27 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 16A (Ta)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF7805ZGTRPBF.

Pwodwi atribi IRF7805ZGTRPBF IRF7805TRPBF IRF7805ATRPBF IRF7807D1
Nimewo Pati IRF7805ZGTRPBF IRF7805TRPBF IRF7805ATRPBF IRF7807D1
Manifakti Infineon Technologies International Rectifier Infineon Technologies Infineon Technologies
Seri HEXFET® HEXFET® HEXFET® FETKY™
Drenaj Sous Voltage (Vdss) 30 V 30 V 30 V 30 V
Rds Sou (Max) @ Id, Vgs 6.8mOhm @ 16A, 10V 11mOhm @ 7A, 4.5V 11mOhm @ 7A, 4.5V 25mOhm @ 7A, 4.5V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kapasite Antre (Ciss) (Max) @ Vds 2080 pF @ 15 V - - -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (th) (Max) @ Id 2.25V @ 250µA 3V @ 250µA 3V @ 250µA 1V @ 250µA
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Pakèt Tape & Reel (TR) Bulk Tape & Reel (TR) Tube
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kouran - Kontini Drain (Id) @ 25 ° C 16A (Ta) 13A (Ta) 13A (Ta) 8.3A (Ta)
Founisè Aparèy pake 8-SO 8-SO 8-SO 8-SO
Dissipasyon pouvwa (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Tc)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Vgs (Max) ±20V ±12V ±12V ±12V
Pòtay Charge (Qg) (Max) @ Vgs 27 nC @ 4.5 V 31 nC @ 5 V 31 nC @ 5 V 17 nC @ 5 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V 4.5V 4.5V
FET Feature - - - Schottky Diode (Isolated)

IRF7805ZGTRPBF fich PDF

Download IRF7805ZGTRPBF PDF fich ak dokiman Infineon Technologies pou IRF7805ZGTRPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
Asanble PCN/orijin
Backend Wafer Transfer 23/Oct/2013.pdf
PCN obsolescence/ eol
Multiple Devices 25/Apr/2014.pdf Multiple Devices 25/Apr/2014.pdf

Shipment

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IRF7805ZGTRPBF

Infineon Technologies
32D-IRF7805ZGTRPBF

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