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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF7805ZTRPBF
IRF7805ZTRPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF7805ZTRPBF - Infineon Technologies

Manifakti Nimewo Pati
IRF7805ZTRPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF7805ZTRPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 30V 16A 8SO
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
IRF7805ZTRPBF.pdf
RoHs Status
Nan stok: 28656

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon IRF7805ZTRPBF Tech
Infineon Technologies - IRF7805ZTRPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF7805ZTRPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2.25V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SO  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 6.8mOhm @ 16A, 10V  
Dissipasyon pouvwa (Max) 2.5W (Ta)  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 2080 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 27 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 16A (Ta)  
Nimewo pwodwi baz IRF7805  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF7805ZTRPBF.

Pwodwi atribi IRF7805ZTRPBF IRF7807 IRF7805TRPBF IRF7807D1TRPBF
Nimewo Pati IRF7805ZTRPBF IRF7807 IRF7805TRPBF IRF7807D1TRPBF
Manifakti Infineon Technologies Infineon Technologies International Rectifier Infineon Technologies
FET Feature - - - Schottky Diode (Isolated)
Vgs (th) (Max) @ Id 2.25V @ 250µA 1V @ 250µA 3V @ 250µA 1V @ 250µA
Kouran - Kontini Drain (Id) @ 25 ° C 16A (Ta) 8.3A (Ta) 13A (Ta) 8.3A (Ta)
Founisè Aparèy pake 8-SO 8-SO 8-SO 8-SO
Dissipasyon pouvwa (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Nimewo pwodwi baz IRF7805 - - -
Pakèt Tape & Reel (TR) Tube Bulk Tape & Reel (TR)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Vgs (Max) ±20V ±12V ±12V ±12V
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V 4.5V 4.5V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Rds Sou (Max) @ Id, Vgs 6.8mOhm @ 16A, 10V 25mOhm @ 7A, 4.5V 11mOhm @ 7A, 4.5V 25mOhm @ 7A, 4.5V
Kapasite Antre (Ciss) (Max) @ Vds 2080 pF @ 15 V - - -
Seri HEXFET® HEXFET® HEXFET® FETKY™
Drenaj Sous Voltage (Vdss) 30 V 30 V 30 V 30 V
Pòtay Charge (Qg) (Max) @ Vgs 27 nC @ 4.5 V 17 nC @ 5 V 31 nC @ 5 V 17 nC @ 5 V

IRF7805ZTRPBF fich PDF

Download IRF7805ZTRPBF PDF fich ak dokiman Infineon Technologies pou IRF7805ZTRPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN anbalaj
Packing Material Update 16/Sep/2016.pdf Barcode Label Update 24/Feb/2017.pdf
PCN Lòt
Mult Dev Lot Code Standardization 11/Nov/2022.pdf
Asanble PCN/orijin
Mult Dev Site Add 28/Aug/2020.pdf
PCN konsepsyon/spesifikasyon
Mult Dev Halogen/PN Status Chgs 21/Feb/2023.pdf

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IRF7805ZTRPBF Image

IRF7805ZTRPBF

Infineon Technologies
32D-IRF7805ZTRPBF

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