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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFH3702TRPBF
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFH3702TRPBF - Infineon Technologies

Manifakti Nimewo Pati
IRFH3702TRPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRFH3702TRPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 30V 16A/42A 8PQFN
Deskripsyon detaye
Pake
8-PowerVDFN
Done fèy
IRFH3702TRPBF.pdf
RoHs Status
Nan stok: 168780

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRFH3702TRPBF Tech
Infineon Technologies - IRFH3702TRPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRFH3702TRPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2.35V @ 25µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-PQFN (3x3)  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 7.1mOhm @ 16A, 10V  
Dissipasyon pouvwa (Max) 2.8W (Ta)  
Pake / Ka 8-PowerVDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1510 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 14 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 16A (Ta), 42A (Tc)  
Nimewo pwodwi baz IRFH3702  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRFH3702TRPBF.

Pwodwi atribi IRFH3702TRPBF IRFH4210TRPBF IRFH3702TR2PBF IRFH3707TRPBF
Nimewo Pati IRFH3702TRPBF IRFH4210TRPBF IRFH3702TR2PBF IRFH3707TRPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Founisè Aparèy pake 8-PQFN (3x3) PQFN (5x6) 8-PQFN (3x3) 8-PQFN (3x3)
Pake / Ka 8-PowerVDFN 8-PowerTDFN 8-PowerVDFN 8-PowerVDFN
Kouran - Kontini Drain (Id) @ 25 ° C 16A (Ta), 42A (Tc) 45A (Ta) 16A (Ta), 42A (Tc) 12A (Ta), 29A (Tc)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Dissipasyon pouvwa (Max) 2.8W (Ta) 3.6W (Ta), 104W (Tc) - 2.8W (Ta)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V - 4.5V, 10V
Fèt tip N-Channel N-Channel N-Channel N-Channel
FET Feature - - - -
Drenaj Sous Voltage (Vdss) 30 V 25 V 30 V 30 V
Vgs (Max) ±20V ±20V - ±20V
Rds Sou (Max) @ Id, Vgs 7.1mOhm @ 16A, 10V 1.35mOhm @ 50A, 10V 7.1mOhm @ 16A, 10V 12.4mOhm @ 12A, 10V
Seri HEXFET® HEXFET® - HEXFET®
Vgs (th) (Max) @ Id 2.35V @ 25µA 2.1V @ 100µA 2.35V @ 25µA 2.35V @ 25µA
Nimewo pwodwi baz IRFH3702 - - IRFH3707
Pakèt Tape & Reel (TR) Tape & Reel (TR) Cut Tape (CT) Tape & Reel (TR)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pòtay Charge (Qg) (Max) @ Vgs 14 nC @ 4.5 V 74 nC @ 10 V 14 nC @ 4.5 V 8.1 nC @ 4.5 V
Kapasite Antre (Ciss) (Max) @ Vds 1510 pF @ 15 V 4812 pF @ 13 V 1510 pF @ 15 V 755 pF @ 15 V

IRFH3702TRPBF fich PDF

Download IRFH3702TRPBF PDF fich ak dokiman Infineon Technologies pou IRFH3702TRPBF - Infineon Technologies.

PCN konsepsyon/spesifikasyon
Mult Dev Label Chgs Aug/2020.pdf
PCN anbalaj
Packing Material Update 16/Sep/2016.pdf Mult Dev Lot No Format Chg 6/Apr/2018.pdf
Asanble PCN/orijin
Alternate Assembly Site 05/Feb/2014.pdf

Shipment

Tan livrezon

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    +00852 9146 4856

Sètifikasyon & Manm

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Infineon Technologies

IRFH3702TRPBF

Infineon Technologies
32D-IRFH3702TRPBF

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