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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFH3707TRPBF
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFH3707TRPBF - Infineon Technologies

Manifakti Nimewo Pati
IRFH3707TRPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRFH3707TRPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 30V 12A/29A 8PQFN
Deskripsyon detaye
Pake
8-PowerVDFN
Done fèy
IRFH3707TRPBF.pdf
RoHs Status
Nan stok: 216900

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRFH3707TRPBF Tech
Infineon Technologies - IRFH3707TRPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRFH3707TRPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2.35V @ 25µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-PQFN (3x3)  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 12.4mOhm @ 12A, 10V  
Dissipasyon pouvwa (Max) 2.8W (Ta)  
Pake / Ka 8-PowerVDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 755 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 8.1 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 12A (Ta), 29A (Tc)  
Nimewo pwodwi baz IRFH3707  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRFH3707TRPBF.

Pwodwi atribi IRFH3707TRPBF IRFH4201TRPBF IRFH4209DTRPBF IRFH4213TRPBF
Nimewo Pati IRFH3707TRPBF IRFH4201TRPBF IRFH4209DTRPBF IRFH4213TRPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Vgs (Max) ±20V ±20V ±20V ±20V
Pòtay Charge (Qg) (Max) @ Vgs 8.1 nC @ 4.5 V 94 nC @ 10 V 74 nC @ 10 V 54 nC @ 10 V
Vgs (th) (Max) @ Id 2.35V @ 25µA 2.1V @ 150µA 2.1V @ 100µA 2.1V @ 100µA
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Drenaj Sous Voltage (Vdss) 30 V 25 V 25 V 25 V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Nimewo pwodwi baz IRFH3707 - - -
FET Feature - - - -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Dissipasyon pouvwa (Max) 2.8W (Ta) 3.5W (Ta), 156W (Tc) 3.5W (Ta), 125W (Tc) 3.6W (Ta), 89W (Tc)
Kouran - Kontini Drain (Id) @ 25 ° C 12A (Ta), 29A (Tc) 49A (Ta) 44A (Ta), 260A (Tc) 41A (Ta)
Pake / Ka 8-PowerVDFN 8-PowerVDFN 8-PowerTDFN 8-PowerTDFN
Seri HEXFET® HEXFET® FASTIRFET™, HEXFET® HEXFET®
Founisè Aparèy pake 8-PQFN (3x3) 8-PQFN (5x6) PQFN (5x6) PQFN (5x6)
Rds Sou (Max) @ Id, Vgs 12.4mOhm @ 12A, 10V 0.95mOhm @ 50A, 10V 1.1mOhm @ 50A, 10V 1.35mOhm @ 50A, 10V
Kapasite Antre (Ciss) (Max) @ Vds 755 pF @ 15 V 6100 pF @ 13 V 4620 pF @ 13 V 3420 pF @ 13 V

IRFH3707TRPBF fich PDF

Download IRFH3707TRPBF PDF fich ak dokiman Infineon Technologies pou IRFH3707TRPBF - Infineon Technologies.

PCN anbalaj
Package Drawing Update 19/Aug/2015.pdf Mult Dev Lot No Format Chg 6/Apr/2018.pdf
PCN konsepsyon/spesifikasyon
Mult Dev Label Chgs Aug/2020.pdf
Asanble PCN/orijin
Mult Mosfet Test/Fab Add 9/Oct/2017.pdf

Shipment

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    +00852 9146 4856

Sètifikasyon & Manm

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Infineon Technologies

IRFH3707TRPBF

Infineon Technologies
32D-IRFH3707TRPBF

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