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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFH7107TRPBF
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

IRFH7107TRPBF - Infineon Technologies

Manifakti Nimewo Pati
IRFH7107TRPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRFH7107TRPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 75V 14A/75A 8PQFN
Pake
8-PowerTDFN
Done fèy
IRFH7107PbF.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 3750

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon IRFH7107TRPBF Tech
Infineon Technologies - IRFH7107TRPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRFH7107TRPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 100µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-PQFN (5x6)  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 8.5mOhm @ 45A, 10V  
Dissipasyon pouvwa (Max) 3.6W (Ta), 104W (Tc)  
Pake / Ka 8-PowerTDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 3110 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 72 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 75 V  
Kouran - Kontini Drain (Id) @ 25 ° C 14A (Ta), 75A (Tc)  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRFH7107TRPBF.

Pwodwi atribi IRFH7107TRPBF IRFH7110TRPBF IRFH7004TRPBF IRFH7084TRPBF
Nimewo Pati IRFH7107TRPBF IRFH7110TRPBF IRFH7004TRPBF IRFH7084TRPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Rds Sou (Max) @ Id, Vgs 8.5mOhm @ 45A, 10V 13.5mOhm @ 35A, 10V 1.4mOhm @ 100A, 10V 1.25mOhm @ 100A, 10V
Pòtay Charge (Qg) (Max) @ Vgs 72 nC @ 10 V 87 nC @ 10 V 194 nC @ 10 V 190 nC @ 10 V
Seri HEXFET® HEXFET® HEXFET®, StrongIRFET™ HEXFET®
Vgs (Max) ±20V ±20V ±20V ±20V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kouran - Kontini Drain (Id) @ 25 ° C 14A (Ta), 75A (Tc) 11A (Ta), 58A (Tc) 100A (Tc) 100A (Tc)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 6V, 10V 10V
FET Feature - - - -
Drenaj Sous Voltage (Vdss) 75 V 100 V 40 V 40 V
Vgs (th) (Max) @ Id 4V @ 100µA 4V @ 100µA 3.9V @ 150µA 3.9V @ 150µA
Founisè Aparèy pake 8-PQFN (5x6) 8-PQFN (5x6) 8-PQFN (5x6) 8-PQFN (5x6)
Dissipasyon pouvwa (Max) 3.6W (Ta), 104W (Tc) 3.6W (Ta), 104W (Tc) 156W (Tc) 156W (Tc)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Pake / Ka 8-PowerTDFN 8-TQFN Exposed Pad 8-VQFN Exposed Pad 8-PowerTDFN
Kapasite Antre (Ciss) (Max) @ Vds 3110 pF @ 25 V 3240 pF @ 25 V 6419 pF @ 25 V 6560 pF @ 25 V

IRFH7107TRPBF fich PDF

Download IRFH7107TRPBF PDF fich ak dokiman Infineon Technologies pou IRFH7107TRPBF - Infineon Technologies.

PCN anbalaj
Package Drawing Update 19/Aug/2015.pdf Mult Dev Label Chgs 18/Feb/2020.pdf
PCN konsepsyon/spesifikasyon
Mult Dev No Format/Barcode Label 15/Jan/2019.pdf
Asanble PCN/orijin
Warehouse Transfer 29/Jul/2015.pdf
PCN obsolescence/ eol
Mult Devices EOL 08/May/2019.pdf
Fich
IRFH7107PbF.pdf

Shipment

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Infineon Technologies

IRFH7107TRPBF

Infineon Technologies
32D-IRFH7107TRPBF

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