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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFH7182TRPBF
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

IRFH7182TRPBF - Infineon Technologies

Manifakti Nimewo Pati
IRFH7182TRPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRFH7182TRPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 23A/157A 8PQFN
Pake
8-PowerTDFN
Done fèy
IRFH7182PbF.pdf
Sètifikasyon nou an
Nan stok: 4800

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon IRFH7182TRPBF Tech
Infineon Technologies - IRFH7182TRPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRFH7182TRPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 3.6V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-PQFN (5x6)  
Seri FASTIRFET™, HEXFET®  
Rds Sou (Max) @ Id, Vgs 3.9mOhm @ 50A, 10V  
Dissipasyon pouvwa (Max) 4W (Ta), 195W (Tc)  
Pake / Ka 8-PowerTDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 3120 pF @ 50 V  
Pòtay Charge (Qg) (Max) @ Vgs 74 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 23A (Ta), 157A (Tc)  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRFH7182TRPBF.

Pwodwi atribi IRFH7182TRPBF IRFH7110TRPBF IRFH7107TR2PBF IRFH7107TRPBF
Nimewo Pati IRFH7182TRPBF IRFH7110TRPBF IRFH7107TR2PBF IRFH7107TRPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Cut Tape (CT) Tape & Reel (TR)
Vgs (Max) ±20V ±20V - ±20V
Seri FASTIRFET™, HEXFET® HEXFET® - HEXFET®
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pòtay Charge (Qg) (Max) @ Vgs 74 nC @ 10 V 87 nC @ 10 V 72 nC @ 10 V 72 nC @ 10 V
Dissipasyon pouvwa (Max) 4W (Ta), 195W (Tc) 3.6W (Ta), 104W (Tc) - 3.6W (Ta), 104W (Tc)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V - 10V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kouran - Kontini Drain (Id) @ 25 ° C 23A (Ta), 157A (Tc) 11A (Ta), 58A (Tc) 14A (Ta), 75A (Tc) 14A (Ta), 75A (Tc)
Vgs (th) (Max) @ Id 3.6V @ 250µA 4V @ 100µA 4V @ 100µA 4V @ 100µA
Founisè Aparèy pake 8-PQFN (5x6) 8-PQFN (5x6) 8-PQFN (5x6) 8-PQFN (5x6)
Drenaj Sous Voltage (Vdss) 100 V 100 V 75 V 75 V
Kapasite Antre (Ciss) (Max) @ Vds 3120 pF @ 50 V 3240 pF @ 25 V 3110 pF @ 25 V 3110 pF @ 25 V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pake / Ka 8-PowerTDFN 8-TQFN Exposed Pad 8-PowerTDFN 8-PowerTDFN
FET Feature - - - -
Rds Sou (Max) @ Id, Vgs 3.9mOhm @ 50A, 10V 13.5mOhm @ 35A, 10V 8.5mOhm @ 45A, 10V 8.5mOhm @ 45A, 10V

IRFH7182TRPBF fich PDF

Download IRFH7182TRPBF PDF fich ak dokiman Infineon Technologies pou IRFH7182TRPBF - Infineon Technologies.

PCN obsolescence/ eol
Mult Device EOL 22/Jul/2016.pdf
Fich
IRFH7182PbF.pdf

Shipment

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IRFH7182TRPBF

Infineon Technologies
32D-IRFH7182TRPBF

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