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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFI3205PBF
IRFI3205PBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFI3205PBF - Infineon Technologies

Manifakti Nimewo Pati
IRFI3205PBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRFI3205PBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 55V 64A TO220AB FP
Deskripsyon detaye
Pake
TO-220-3 Full Pack
Done fèy
IRFI3205PBF.pdf
RoHs Status
Nan stok: 21623

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Espesifikasyon

Espesifikasyon IRFI3205PBF Tech
Infineon Technologies - IRFI3205PBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRFI3205PBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220AB Full-Pak  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 8mOhm @ 34A, 10V  
Dissipasyon pouvwa (Max) 63W (Tc)  
Pake / Ka TO-220-3 Full Pack  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 4000 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 170 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 55 V  
Kouran - Kontini Drain (Id) @ 25 ° C 64A (Tc)  
Nimewo pwodwi baz IRFI3205  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRFI3205PBF.

Pwodwi atribi IRFI3205PBF IRFI1310NPBF IRFI1010NPBF IRFHS9301TRPBF
Nimewo Pati IRFI3205PBF IRFI1310NPBF IRFI1010NPBF IRFHS9301TRPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Mounting Kalite Through Hole Through Hole Through Hole Surface Mount
Drenaj Sous Voltage (Vdss) 55 V 100 V 55 V 30 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kouran - Kontini Drain (Id) @ 25 ° C 64A (Tc) 24A (Tc) 49A (Tc) 6A (Ta), 13A (Tc)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 4.5V, 10V
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Founisè Aparèy pake TO-220AB Full-Pak TO-220AB Full-Pak TO-220AB Full-Pak 6-PQFN (2x2) (DFN2020)
Kapasite Antre (Ciss) (Max) @ Vds 4000 pF @ 25 V 1900 pF @ 25 V 2900 pF @ 25 V 580 pF @ 25 V
Pòtay Charge (Qg) (Max) @ Vgs 170 nC @ 10 V 120 nC @ 10 V 130 nC @ 10 V 13 nC @ 10 V
Fèt tip N-Channel N-Channel N-Channel P-Channel
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Pake / Ka TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack 6-PowerVDFN
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 2.4V @ 25µA
Pakèt Tube Tube Tube Tape & Reel (TR)
Rds Sou (Max) @ Id, Vgs 8mOhm @ 34A, 10V 36mOhm @ 13A, 10V 12mOhm @ 26A, 10V 37mOhm @ 7.8A, 10V
FET Feature - - - -
Dissipasyon pouvwa (Max) 63W (Tc) 56W (Tc) 58W (Tc) 2.1W (Ta)
Vgs (Max) ±20V ±20V ±20V ±20V
Nimewo pwodwi baz IRFI3205 IRFI1310 - IRFHS9301

IRFI3205PBF fich PDF

Download IRFI3205PBF PDF fich ak dokiman Infineon Technologies pou IRFI3205PBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN anbalaj
Mult Device Standard Label Chg 29/Sep/2017.pdf Tube Label Chgs 20/May/2020.pdf
PCN konsepsyon/spesifikasyon
Mult Dev Label Chgs Aug/2020.pdf POD Datasheet Rev 28/Apr/2017.pdf
Asanble PCN/orijin
Mult Dev A/T Site 26/Feb/2021.pdf

Shipment

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IRFI3205PBF Image

IRFI3205PBF

Infineon Technologies
32D-IRFI3205PBF

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