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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFIZ24NPBF
IRFIZ24NPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFIZ24NPBF - Infineon Technologies

Manifakti Nimewo Pati
IRFIZ24NPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRFIZ24NPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 55V 14A TO220AB FP
Deskripsyon detaye
Pake
TO-220-3 Full Pack
Done fèy
IRFIZ24NPBF.pdf
RoHs Status
Nan stok: 67790

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Espesifikasyon

Espesifikasyon IRFIZ24NPBF Tech
Infineon Technologies - IRFIZ24NPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRFIZ24NPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220AB Full-Pak  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 70mOhm @ 7.8A, 10V  
Dissipasyon pouvwa (Max) 29W (Tc)  
Pake / Ka TO-220-3 Full Pack  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 370 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 20 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 55 V  
Kouran - Kontini Drain (Id) @ 25 ° C 14A (Tc)  
Nimewo pwodwi baz IRFIZ24  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRFIZ24NPBF.

Pwodwi atribi IRFIZ24NPBF IRFIZ24GPBF IRFIZ24EPBF IRFIZ14G
Nimewo Pati IRFIZ24NPBF IRFIZ24GPBF IRFIZ24EPBF IRFIZ14G
Manifakti Infineon Technologies Vishay Siliconix Infineon Technologies Vishay Siliconix
Vgs (Max) ±20V ±20V ±20V ±20V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pake / Ka TO-220-3 Full Pack TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack TO-220-3 Full Pack, Isolated Tab
Seri HEXFET® - HEXFET® -
Kapasite Antre (Ciss) (Max) @ Vds 370 pF @ 25 V 640 pF @ 25 V 370 pF @ 25 V 300 pF @ 25 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Rds Sou (Max) @ Id, Vgs 70mOhm @ 7.8A, 10V 100mOhm @ 8.4A, 10V 71mOhm @ 7.8A, 10V 200mOhm @ 4.8A, 10V
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Dissipasyon pouvwa (Max) 29W (Tc) 37W (Tc) 29W (Tc) 27W (Tc)
Founisè Aparèy pake TO-220AB Full-Pak TO-220-3 TO-220AB Full-Pak TO-220-3
Kouran - Kontini Drain (Id) @ 25 ° C 14A (Tc) 14A (Tc) 14A (Tc) 8A (Tc)
FET Feature - - - -
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Pòtay Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 25 nC @ 10 V 20 nC @ 10 V 11 nC @ 10 V
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Drenaj Sous Voltage (Vdss) 55 V 60 V 60 V 60 V
Pakèt Tube Tube Tube Tube
Nimewo pwodwi baz IRFIZ24 IRFIZ24 - IRFIZ14

IRFIZ24NPBF fich PDF

Download IRFIZ24NPBF PDF fich ak dokiman Infineon Technologies pou IRFIZ24NPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN anbalaj
Mult Device Standard Label Chg 29/Sep/2017.pdf Tube Label Chgs 20/May/2020.pdf
PCN konsepsyon/spesifikasyon
Mult Dev Label Chgs Aug/2020.pdf POD Datasheet Rev 28/Apr/2017.pdf
Asanble PCN/orijin
Mult Dev A/T Site 26/Feb/2021.pdf

Shipment

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    +00852 9146 4856

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IRFIZ24NPBF Image

IRFIZ24NPBF

Infineon Technologies
32D-IRFIZ24NPBF

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