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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFS4410
IRFS4410 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFS4410 - Infineon Technologies

Manifakti Nimewo Pati
IRFS4410
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRFS4410
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 96A D2PAK
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
IRFS4410.pdf
Nan stok: 4600

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Espesifikasyon

Espesifikasyon IRFS4410 Tech
Infineon Technologies - IRFS4410 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRFS4410

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 150µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D2PAK  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 10mOhm @ 58A, 10V  
Dissipasyon pouvwa (Max) 250W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 5150 pF @ 50 V  
Pòtay Charge (Qg) (Max) @ Vgs 180 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 96A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRFS4410.

Pwodwi atribi IRFS4410 IRFS4410PBF IRFS4321TRRPBF IRFS4321PBF
Nimewo Pati IRFS4410 IRFS4410PBF IRFS4321TRRPBF IRFS4321PBF
Manifakti Infineon Technologies International Rectifier Infineon Technologies International Rectifier
Kouran - Kontini Drain (Id) @ 25 ° C 96A (Tc) 88A (Tc) 85A (Tc) 85A (Tc)
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Rds Sou (Max) @ Id, Vgs 10mOhm @ 58A, 10V 10mOhm @ 58A, 10V 15mOhm @ 33A, 10V 15mOhm @ 33A, 10V
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Dissipasyon pouvwa (Max) 250W (Tc) 200W (Tc) 350W (Tc) 350W (Tc)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V - 10V 10V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Fèt tip N-Channel N-Channel N-Channel N-Channel
Vgs (th) (Max) @ Id 4V @ 150µA 4V @ 150µA 5V @ 250µA 5V @ 250µA
Pòtay Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 180 nC @ 10 V 110 nC @ 10 V 110 nC @ 10 V
Kapasite Antre (Ciss) (Max) @ Vds 5150 pF @ 50 V 5150 pF @ 50 V 4460 pF @ 25 V 4460 pF @ 25 V
Founisè Aparèy pake D2PAK PG-TO263-3-2 D2PAK D2PAK
Drenaj Sous Voltage (Vdss) 100 V 100 V 150 V 150 V
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Vgs (Max) ±20V ±20V ±20V ±30V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pakèt Tube Bulk Tape & Reel (TR) Bulk
FET Feature - - - -

IRFS4410 fich PDF

Download IRFS4410 PDF fich ak dokiman Infineon Technologies pou IRFS4410 - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN obsolescence/ eol
HiRel EOL 28/Jun/2015.pdf

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Sètifikasyon & Manm

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IRFS4410 Image

IRFS4410

Infineon Technologies
32D-IRFS4410

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