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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFS4410TRLPBF
IRFS4410TRLPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFS4410TRLPBF - Infineon Technologies

Manifakti Nimewo Pati
IRFS4410TRLPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRFS4410TRLPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 88A D2PAK
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
IRFS4410TRLPBF.pdf
RoHs Status
Nan stok: 9702

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon IRFS4410TRLPBF Tech
Infineon Technologies - IRFS4410TRLPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRFS4410TRLPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 150µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TO263-3  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 10mOhm @ 58A, 10V  
Dissipasyon pouvwa (Max) 200W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 5150 pF @ 50 V  
Pòtay Charge (Qg) (Max) @ Vgs 180 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 88A (Tc)  
Nimewo pwodwi baz IRFS4410  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRFS4410TRLPBF.

Pwodwi atribi IRFS4410TRLPBF IRFS4410ZTRLPBF IRFS450B IRFS4510PBF
Nimewo Pati IRFS4410TRLPBF IRFS4410ZTRLPBF IRFS450B IRFS4510PBF
Manifakti Infineon Technologies Infineon Technologies onsemi Infineon Technologies
Pòtay Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 120 nC @ 10 V 113 nC @ 10 V 87 nC @ 10 V
Nimewo pwodwi baz IRFS4410 IRFS4410 IRFS450 -
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Drenaj Sous Voltage (Vdss) 100 V 100 V 500 V 100 V
Founisè Aparèy pake PG-TO263-3 PG-TO263-3 TO-3PF PG-TO263-3
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Feature - - - -
Vgs (th) (Max) @ Id 4V @ 150µA 4V @ 150µA 4V @ 250µA 4V @ 100µA
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tube Tube
Rds Sou (Max) @ Id, Vgs 10mOhm @ 58A, 10V 9mOhm @ 58A, 10V 390mOhm @ 4.8A, 10V 13.9mOhm @ 37A, 10V
Seri HEXFET® HEXFET® - HEXFET®
Mounting Kalite Surface Mount Surface Mount Through Hole Surface Mount
Vgs (Max) ±20V ±20V ±30V ±20V
Kouran - Kontini Drain (Id) @ 25 ° C 88A (Tc) 97A (Tc) 9.6A (Tc) 61A (Tc)
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Kapasite Antre (Ciss) (Max) @ Vds 5150 pF @ 50 V 4820 pF @ 50 V 3800 pF @ 25 V 3180 pF @ 50 V
Dissipasyon pouvwa (Max) 200W (Tc) 230W (Tc) 96W (Tc) 140W (Tc)
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-3P-3 Full Pack TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRFS4410TRLPBF fich PDF

Download IRFS4410TRLPBF PDF fich ak dokiman Infineon Technologies pou IRFS4410TRLPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN anbalaj
Package Drawing Update 19/Aug/2015.pdf Mult Device Standard Label Chg 29/Sep/2017.pdf
PCN konsepsyon/spesifikasyon
Mult Dev Label Chgs Aug/2020.pdf Material Chg 24/Nov/2015.pdf
Asanble PCN/orijin
Alternate Assembly Site 11/Nov/2013.pdf

Shipment

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Metòd livrezon

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Sètifikasyon & Manm

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IRFS4410TRLPBF Image

IRFS4410TRLPBF

Infineon Technologies
32D-IRFS4410TRLPBF

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