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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRL3705NPBF
IRL3705NPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRL3705NPBF - Infineon Technologies

Manifakti Nimewo Pati
IRL3705NPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRL3705NPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 55V 89A TO220AB
Deskripsyon detaye
Pake
TO-220-3
Done fèy
IRL3705NPBF.pdf
RoHs Status
Nan stok: 33781

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRL3705NPBF Tech
Infineon Technologies - IRL3705NPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRL3705NPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2V @ 250µA  
Vgs (Max) ±16V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220AB  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 10mOhm @ 46A, 10V  
Dissipasyon pouvwa (Max) 170W (Tc)  
Pake / Ka TO-220-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 3600 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 98 nC @ 5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4V, 10V  
Drenaj Sous Voltage (Vdss) 55 V  
Kouran - Kontini Drain (Id) @ 25 ° C 89A (Tc)  
Nimewo pwodwi baz IRL3705  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRL3705NPBF.

Pwodwi atribi IRL3705NPBF IRL3705NLPBF IRL3705Z IRL3705NSPBF
Nimewo Pati IRL3705NPBF IRL3705NLPBF IRL3705Z IRL3705NSPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Pòtay Charge (Qg) (Max) @ Vgs 98 nC @ 5 V 98 nC @ 5 V 60 nC @ 5 V 98 nC @ 5 V
Drenaj Sous Voltage (Vdss) 55 V 55 V 55 V 55 V
Pake / Ka TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Rds Sou (Max) @ Id, Vgs 10mOhm @ 46A, 10V 10mOhm @ 46A, 10V 8mOhm @ 52A, 10V 10mOhm @ 46A, 10V
Dissipasyon pouvwa (Max) 170W (Tc) 3.8W (Ta), 170W (Tc) 130W (Tc) 3.8W (Ta), 170W (Tc)
Nimewo pwodwi baz IRL3705 - - -
Vgs (th) (Max) @ Id 2V @ 250µA 2V @ 250µA 3V @ 250µA 2V @ 250µA
Founisè Aparèy pake TO-220AB TO-262 TO-220AB D2PAK
Vgs (Max) ±16V ±16V ±16V ±16V
Pakèt Tube Tube Tube Tube
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kondwi Voltage (Max Rds sou, Min Rds sou) 4V, 10V 4V, 10V 4.5V, 10V 4V, 10V
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Kouran - Kontini Drain (Id) @ 25 ° C 89A (Tc) 89A (Tc) 75A (Tc) 89A (Tc)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Seri HEXFET® HEXFET® HEXFET® HEXFET®
FET Feature - - - -
Mounting Kalite Through Hole Through Hole Through Hole Surface Mount
Kapasite Antre (Ciss) (Max) @ Vds 3600 pF @ 25 V 3600 pF @ 25 V 2880 pF @ 25 V 3600 pF @ 25 V

IRL3705NPBF fich PDF

Download IRL3705NPBF PDF fich ak dokiman Infineon Technologies pou IRL3705NPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
Asanble PCN/orijin
Mult Dev Wafer Site Chg 18/Dec/2020.pdf
PCN Lòt
Tube Pkg Qty Standardization 18/Aug/2016.pdf
PCN anbalaj
Tube Pkg Qty Std Rev 18/Aug/2016.pdf Packing Material Update 16/Sep/2016.pdf
PCN konsepsyon/spesifikasyon
Mult Dev Label Chgs Aug/2020.pdf Mult Dev Lot Chgs 25/May/2021.pdf

Shipment

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Metòd livrezon

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  1. Telefòn
    +00852 9146 4856

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IRL3705NPBF Image

IRL3705NPBF

Infineon Technologies
32D-IRL3705NPBF

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