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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRL3716PBF
IRL3716PBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRL3716PBF - Infineon Technologies

Manifakti Nimewo Pati
IRL3716PBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRL3716PBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 20V 180A TO220AB
Deskripsyon detaye
Pake
TO-220-3
Done fèy
IRL3716(S,L)PbF.pdf
Nan stok: 3780

Jaden obligatwa yo endike pa yon asterisk (*)
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Espesifikasyon

Espesifikasyon IRL3716PBF Tech
Infineon Technologies - IRL3716PBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRL3716PBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 3V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220AB  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 4mOhm @ 90A, 10V  
Dissipasyon pouvwa (Max) 210W (Tc)  
Pake / Ka TO-220-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 5090 pF @ 10 V  
Pòtay Charge (Qg) (Max) @ Vgs 79 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 20 V  
Kouran - Kontini Drain (Id) @ 25 ° C 180A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRL3716PBF.

Pwodwi atribi IRL3716PBF IRL3803LPBF IRL3803 IRL3715ZLPBF
Nimewo Pati IRL3716PBF IRL3803LPBF IRL3803 IRL3715ZLPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Vgs (Max) ±20V ±16V ±16V ±20V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Dissipasyon pouvwa (Max) 210W (Tc) 3.8W (Ta), 200W (Tc) 200W (Tc) 45W (Tc)
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Rds Sou (Max) @ Id, Vgs 4mOhm @ 90A, 10V 6mOhm @ 71A, 10V 6mOhm @ 71A, 10V 11mOhm @ 15A, 10V
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Kouran - Kontini Drain (Id) @ 25 ° C 180A (Tc) 140A (Tc) 140A (Tc) 50A (Tc)
Pakèt Tube Tube Tube Tube
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Feature - - - -
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Pòtay Charge (Qg) (Max) @ Vgs 79 nC @ 4.5 V 140 nC @ 4.5 V 140 nC @ 4.5 V 11 nC @ 4.5 V
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Drenaj Sous Voltage (Vdss) 20 V 30 V 30 V 20 V
Kapasite Antre (Ciss) (Max) @ Vds 5090 pF @ 10 V 5000 pF @ 25 V 5000 pF @ 25 V 870 pF @ 10 V
Pake / Ka TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA
Founisè Aparèy pake TO-220AB TO-262 TO-220AB TO-262
Vgs (th) (Max) @ Id 3V @ 250µA 1V @ 250µA 1V @ 250µA 2.55V @ 250µA

IRL3716PBF fich PDF

Download IRL3716PBF PDF fich ak dokiman Infineon Technologies pou IRL3716PBF - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
Fich
IRL3716(S,L)PbF.pdf

Shipment

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IRL3716PBF

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32D-IRL3716PBF

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