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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRL3803LPBF
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

IRL3803LPBF - Infineon Technologies

Manifakti Nimewo Pati
IRL3803LPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRL3803LPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 30V 140A TO262
Pake
TO-262-3 Long Leads, I²Pak, TO-262AA
Done fèy
IRL3803LPBF.pdf
Sètifikasyon nou an
Nan stok: 4810

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon IRL3803LPBF Tech
Infineon Technologies - IRL3803LPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRL3803LPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 1V @ 250µA  
Vgs (Max) ±16V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-262  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 6mOhm @ 71A, 10V  
Dissipasyon pouvwa (Max) 3.8W (Ta), 200W (Tc)  
Pake / Ka TO-262-3 Long Leads, I²Pak, TO-262AA  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 5000 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 140 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 140A (Tc)  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRL3803LPBF.

Pwodwi atribi IRL3803LPBF IRL3803STRL IRL3716 IRL3803
Nimewo Pati IRL3803LPBF IRL3803STRL IRL3716 IRL3803
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Drenaj Sous Voltage (Vdss) 30 V 30 V 20 V 30 V
Vgs (th) (Max) @ Id 1V @ 250µA 1V @ 250µA 3V @ 250µA 1V @ 250µA
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Dissipasyon pouvwa (Max) 3.8W (Ta), 200W (Tc) 3.8W (Ta), 200W (Tc) 210W (Tc) 200W (Tc)
Founisè Aparèy pake TO-262 D2PAK TO-220AB TO-220AB
Kouran - Kontini Drain (Id) @ 25 ° C 140A (Tc) 140A (Tc) 180A (Tc) 140A (Tc)
Kapasite Antre (Ciss) (Max) @ Vds 5000 pF @ 25 V 5000 pF @ 25 V 5090 pF @ 10 V 5000 pF @ 25 V
Mounting Kalite Through Hole Surface Mount Through Hole Through Hole
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds Sou (Max) @ Id, Vgs 6mOhm @ 71A, 10V 6mOhm @ 71A, 10V 4mOhm @ 90A, 10V 6mOhm @ 71A, 10V
Vgs (Max) ±16V ±16V ±20V ±16V
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Pòtay Charge (Qg) (Max) @ Vgs 140 nC @ 4.5 V 140 nC @ 4.5 V 79 nC @ 4.5 V 140 nC @ 4.5 V
Pake / Ka TO-262-3 Long Leads, I²Pak, TO-262AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Feature - - - -
Pakèt Tube Tape & Reel (TR) Tube Tube
Fèt tip N-Channel N-Channel N-Channel N-Channel

IRL3803LPBF fich PDF

Download IRL3803LPBF PDF fich ak dokiman Infineon Technologies pou IRL3803LPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN obsolescence/ eol
Multiple Devices 25/Apr/2014.pdf

Shipment

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Infineon Technologies

IRL3803LPBF

Infineon Technologies
32D-IRL3803LPBF

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