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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleDMG4N60SK3-13
DMG4N60SK3-13 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

DMG4N60SK3-13 - Diodes Incorporated

Manifakti Nimewo Pati
DMG4N60SK3-13
Manifakti
Diodes Incorporated
Allelco Nimewo Pati
32D-DMG4N60SK3-13
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 600V 3.7A TO252 T&R
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
DMG4N60SK3.pdf
RoHs Status
Nan stok: 5290

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon DMG4N60SK3-13 Tech
Diodes Incorporated - DMG4N60SK3-13 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Diodes Incorporated - DMG4N60SK3-13

Pwodwi atribi Valè atribi  
Manifakti Diodes Incorporated  
Vgs (th) (Max) @ Id 4.5V @ 250µA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-252-3  
Seri -  
Rds Sou (Max) @ Id, Vgs 2.3Ohm @ 2A, 10V  
Dissipasyon pouvwa (Max) 48W (Ta)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 532 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 14.3 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 600 V  
Kouran - Kontini Drain (Id) @ 25 ° C 3.7A (Tc)  
Nimewo pwodwi baz DMG4  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Diodes Incorporated DMG4N60SK3-13.

Pwodwi atribi DMG4N60SK3-13 DMG4N60SJ3 DMG4N65CTI DMG4812SSS-13
Nimewo Pati DMG4N60SK3-13 DMG4N60SJ3 DMG4N65CTI DMG4812SSS-13
Manifakti Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Kouran - Kontini Drain (Id) @ 25 ° C 3.7A (Tc) 3A (Tc) 4A (Tc) 8A (Ta)
Dissipasyon pouvwa (Max) 48W (Ta) 41W (Tc) 8.35W (Ta) 1.54W (Ta)
Pòtay Charge (Qg) (Max) @ Vgs 14.3 nC @ 10 V 14.3 nC @ 10 V 13.5 nC @ 10 V 18.5 nC @ 10 V
Nimewo pwodwi baz DMG4 DMG4 DMG4 DMG4812
Mounting Kalite Surface Mount Through Hole Through Hole Surface Mount
Founisè Aparèy pake TO-252-3 TO-251 ITO-220AB 8-SO
FET Feature - - - Schottky Diode (Body)
Vgs (th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 5V @ 250µA 2.3V @ 250µA
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-251-3 Short Leads, IPak, TO-251AA TO-220-3 Full Pack, Isolated Tab 8-SOIC (0.154", 3.90mm Width)
Vgs (Max) ±30V ±30V ±30V ±12V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Seri - - - -
Drenaj Sous Voltage (Vdss) 600 V 600 V 650 V 30 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 4.5V, 10V
Pakèt Tape & Reel (TR) Tube Tube Tape & Reel (TR)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Rds Sou (Max) @ Id, Vgs 2.3Ohm @ 2A, 10V 2.5Ohm @ 2A, 10V 3Ohm @ 2A, 10V 15mOhm @ 10.7A, 10V
Kapasite Antre (Ciss) (Max) @ Vds 532 pF @ 25 V 532 pF @ 25 V 900 pF @ 25 V 1849 pF @ 15 V

DMG4N60SK3-13 fich PDF

Download DMG4N60SK3-13 PDF fich ak dokiman Diodes Incorporated pou DMG4N60SK3-13 - Diodes Incorporated.

Enfòmasyon sou anviwònman an
Diodes Environmental Compliance Cert.pdf
PCN obsolescence/ eol
Mult Devices EOL 05/Feb/2019.pdf
Fich
DMG4N60SK3.pdf

Shipment

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Sètifikasyon & Manm

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DMG4N60SK3-13 Image

DMG4N60SK3-13

Diodes Incorporated
32D-DMG4N60SK3-13

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