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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleDMG4N65CTI
DMG4N65CTI Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

DMG4N65CTI - Diodes Incorporated

Manifakti Nimewo Pati
DMG4N65CTI
Manifakti
Diodes Incorporated
Allelco Nimewo Pati
32D-DMG4N65CTI
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 650V 4A ITO220AB
Deskripsyon detaye
Pake
TO-220-3 Full Pack, Isolated Tab
Done fèy
DMG4N65CTI.pdf
RoHs Status
Nan stok: 5350

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Kantite

Espesifikasyon

Espesifikasyon DMG4N65CTI Tech
Diodes Incorporated - DMG4N65CTI espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Diodes Incorporated - DMG4N65CTI

Pwodwi atribi Valè atribi  
Manifakti Diodes Incorporated  
Vgs (th) (Max) @ Id 5V @ 250µA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake ITO-220AB  
Seri -  
Rds Sou (Max) @ Id, Vgs 3Ohm @ 2A, 10V  
Dissipasyon pouvwa (Max) 8.35W (Ta)  
Pake / Ka TO-220-3 Full Pack, Isolated Tab  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 900 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 13.5 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 650 V  
Kouran - Kontini Drain (Id) @ 25 ° C 4A (Tc)  
Nimewo pwodwi baz DMG4  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Diodes Incorporated DMG4N65CTI.

Pwodwi atribi DMG4N65CTI DMG4812SSS-13 DMG4N60SK3-13 DMG4N60SJ3
Nimewo Pati DMG4N65CTI DMG4812SSS-13 DMG4N60SK3-13 DMG4N60SJ3
Manifakti Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Drenaj Sous Voltage (Vdss) 650 V 30 V 600 V 600 V
Kapasite Antre (Ciss) (Max) @ Vds 900 pF @ 25 V 1849 pF @ 15 V 532 pF @ 25 V 532 pF @ 25 V
Mounting Kalite Through Hole Surface Mount Surface Mount Through Hole
Pòtay Charge (Qg) (Max) @ Vgs 13.5 nC @ 10 V 18.5 nC @ 10 V 14.3 nC @ 10 V 14.3 nC @ 10 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pake / Ka TO-220-3 Full Pack, Isolated Tab 8-SOIC (0.154", 3.90mm Width) TO-252-3, DPak (2 Leads + Tab), SC-63 TO-251-3 Short Leads, IPak, TO-251AA
Vgs (th) (Max) @ Id 5V @ 250µA 2.3V @ 250µA 4.5V @ 250µA 4.5V @ 250µA
Fèt tip N-Channel N-Channel N-Channel N-Channel
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Rds Sou (Max) @ Id, Vgs 3Ohm @ 2A, 10V 15mOhm @ 10.7A, 10V 2.3Ohm @ 2A, 10V 2.5Ohm @ 2A, 10V
Vgs (Max) ±30V ±12V ±30V ±30V
Seri - - - -
FET Feature - Schottky Diode (Body) - -
Kouran - Kontini Drain (Id) @ 25 ° C 4A (Tc) 8A (Ta) 3.7A (Tc) 3A (Tc)
Nimewo pwodwi baz DMG4 DMG4812 DMG4 DMG4
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 4.5V, 10V 10V 10V
Founisè Aparèy pake ITO-220AB 8-SO TO-252-3 TO-251
Pakèt Tube Tape & Reel (TR) Tape & Reel (TR) Tube
Dissipasyon pouvwa (Max) 8.35W (Ta) 1.54W (Ta) 48W (Ta) 41W (Tc)

DMG4N65CTI fich PDF

Download DMG4N65CTI PDF fich ak dokiman Diodes Incorporated pou DMG4N65CTI - Diodes Incorporated.

Enfòmasyon sou anviwònman an
Diodes Environmental Compliance Cert.pdf
PCN obsolescence/ eol
Mult Devices EOL 05/Feb/2019.pdf
Fich
DMG4N65CTI.pdf

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DMG4N65CTI

Diodes Incorporated
32D-DMG4N65CTI

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