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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleDMN4800LSS-13
Diodes Incorporated
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

DMN4800LSS-13 - Diodes Incorporated

Manifakti Nimewo Pati
DMN4800LSS-13
Manifakti
Diodes Incorporated
Allelco Nimewo Pati
32D-DMN4800LSS-13
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 30V 9A 8SOP
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
DMN4800LSS.pdf
RoHs Status
Nan stok: 252630

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon DMN4800LSS-13 Tech
Diodes Incorporated - DMN4800LSS-13 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Diodes Incorporated - DMN4800LSS-13

Pwodwi atribi Valè atribi  
Manifakti Diodes Incorporated  
Vgs (th) (Max) @ Id 1.6V @ 250µA  
Vgs (Max) ±25V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SO  
Seri -  
Rds Sou (Max) @ Id, Vgs 16mOhm @ 9A, 10V  
Dissipasyon pouvwa (Max) 1.46W (Ta)  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 798 pF @ 10 V  
Pòtay Charge (Qg) (Max) @ Vgs 9.47 nC @ 5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 9A (Ta)  
Nimewo pwodwi baz DMN4800  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Diodes Incorporated DMN4800LSS-13.

Pwodwi atribi DMN4800LSS-13 DMN5040LSS-13 DMN4800LSSQ-13 DMN4060SVT-7
Nimewo Pati DMN4800LSS-13 DMN5040LSS-13 DMN4800LSSQ-13 DMN4060SVT-7
Manifakti Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Kouran - Kontini Drain (Id) @ 25 ° C 9A (Ta) 5.2A (Ta) 8.6A (Ta) 4.8A (Ta)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Seri - Automotive, AEC-Q101 Automotive, AEC-Q101 -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Dissipasyon pouvwa (Max) 1.46W (Ta) 1.3W (Ta) 1.46W (Ta) 1.2W (Ta)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Drenaj Sous Voltage (Vdss) 30 V 50 V 30 V 45 V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Nimewo pwodwi baz DMN4800 DMN5040 DMN4800 DMN4060
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
FET Feature - - - -
Rds Sou (Max) @ Id, Vgs 16mOhm @ 9A, 10V 40mOhm @ 4.5A, 10V 14mOhm @ 9A, 10V 46mOhm @ 4.3A, 10V
Founisè Aparèy pake 8-SO 8-SO 8-SO TSOT-26
Vgs (Max) ±25V ±20V ±25V ±20V
Pòtay Charge (Qg) (Max) @ Vgs 9.47 nC @ 5 V 14.5 nC @ 10 V 8.7 nC @ 5 V 22.4 nC @ 10 V
Vgs (th) (Max) @ Id 1.6V @ 250µA 3V @ 250µA 1.6V @ 250µA 3V @ 250µA
Kapasite Antre (Ciss) (Max) @ Vds 798 pF @ 10 V 836 pF @ 30 V 798 pF @ 10 V 1287 pF @ 25 V
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) SOT-23-6 Thin, TSOT-23-6

DMN4800LSS-13 fich PDF

Download DMN4800LSS-13 PDF fich ak dokiman Diodes Incorporated pou DMN4800LSS-13 - Diodes Incorporated.

Enfòmasyon sou anviwònman an
Diodes Environmental Compliance Cert.pdf
PCN Lòt
Multiple Device Changes 29/Apr/2013.pdf
PCN konsepsyon/spesifikasyon
Bond Wire 11/Nov/2011.pdf
Fich
DMN4800LSS.pdf

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
Diodes Incorporated

DMN4800LSS-13

Diodes Incorporated
32D-DMN4800LSS-13

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